Trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method

Xue Zhao; Xin Tang; Taipeng Li; Menglu Chen

doi:10.1016/j.infrared.2023.104788

Trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method

Xue Zhao, Xin Tang, Taipeng Li, Menglu Chen^*

^*Corresponding author for this work

School of Optics and Photonics

Beijing Institute of Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this paper, we investigate a trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method. Usual PbSe mid-infrared photodetectors need the sensitization process requiring a high temperature of 300–600 °C in oxygen-rich and iodine-rich atmospheres, which would damage the silicon-based readout integrated circuits chip. In this work, we demonstrate a new method for PbSe sensitization at a mild temperature of 170 °C, by introducing PbI₂ treated PbSe CQDs. Compared with the untreated PbSe photodetector, the response speed and the photocurrent-dark current ratio of the trap-mode PbSe photodetector are improved by 13–15 times and 2–3 times, respectively. The effects of annealing temperature, content of PbI₂, and deposition time of PbSe bulk film on the photocurrent-dark current ratio and response speed of trap-mode PbSe photodetectors are also discussed.

Original language	English
Article number	104788
Journal	Infrared Physics and Technology
Volume	133
DOIs	https://doi.org/10.1016/j.infrared.2023.104788
Publication status	Published - Sept 2023

Keywords

Colloidal quantum dot
Mid-infrared
PbSe
Trap-mode photodetector

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10.1016/j.infrared.2023.104788

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@article{93e09a6f0a684328b7f8bd9ec25d41cd,

title = "Trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method",

abstract = "In this paper, we investigate a trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method. Usual PbSe mid-infrared photodetectors need the sensitization process requiring a high temperature of 300–600 °C in oxygen-rich and iodine-rich atmospheres, which would damage the silicon-based readout integrated circuits chip. In this work, we demonstrate a new method for PbSe sensitization at a mild temperature of 170 °C, by introducing PbI2 treated PbSe CQDs. Compared with the untreated PbSe photodetector, the response speed and the photocurrent-dark current ratio of the trap-mode PbSe photodetector are improved by 13–15 times and 2–3 times, respectively. The effects of annealing temperature, content of PbI2, and deposition time of PbSe bulk film on the photocurrent-dark current ratio and response speed of trap-mode PbSe photodetectors are also discussed.",

keywords = "Colloidal quantum dot, Mid-infrared, PbSe, Trap-mode photodetector",

author = "Xue Zhao and Xin Tang and Taipeng Li and Menglu Chen",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = sep,

doi = "10.1016/j.infrared.2023.104788",

language = "English",

volume = "133",

journal = "Infrared Physics and Technology",

issn = "1350-4495",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method

AU - Zhao, Xue

AU - Tang, Xin

AU - Li, Taipeng

AU - Chen, Menglu

PY - 2023/9

Y1 - 2023/9

N2 - In this paper, we investigate a trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method. Usual PbSe mid-infrared photodetectors need the sensitization process requiring a high temperature of 300–600 °C in oxygen-rich and iodine-rich atmospheres, which would damage the silicon-based readout integrated circuits chip. In this work, we demonstrate a new method for PbSe sensitization at a mild temperature of 170 °C, by introducing PbI2 treated PbSe CQDs. Compared with the untreated PbSe photodetector, the response speed and the photocurrent-dark current ratio of the trap-mode PbSe photodetector are improved by 13–15 times and 2–3 times, respectively. The effects of annealing temperature, content of PbI2, and deposition time of PbSe bulk film on the photocurrent-dark current ratio and response speed of trap-mode PbSe photodetectors are also discussed.

AB - In this paper, we investigate a trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method. Usual PbSe mid-infrared photodetectors need the sensitization process requiring a high temperature of 300–600 °C in oxygen-rich and iodine-rich atmospheres, which would damage the silicon-based readout integrated circuits chip. In this work, we demonstrate a new method for PbSe sensitization at a mild temperature of 170 °C, by introducing PbI2 treated PbSe CQDs. Compared with the untreated PbSe photodetector, the response speed and the photocurrent-dark current ratio of the trap-mode PbSe photodetector are improved by 13–15 times and 2–3 times, respectively. The effects of annealing temperature, content of PbI2, and deposition time of PbSe bulk film on the photocurrent-dark current ratio and response speed of trap-mode PbSe photodetectors are also discussed.

KW - Colloidal quantum dot

KW - Mid-infrared

KW - PbSe

KW - Trap-mode photodetector

UR - http://www.scopus.com/inward/record.url?scp=85162997644&partnerID=8YFLogxK

U2 - 10.1016/j.infrared.2023.104788

DO - 10.1016/j.infrared.2023.104788

M3 - Article

AN - SCOPUS:85162997644

SN - 1350-4495

VL - 133

JO - Infrared Physics and Technology

JF - Infrared Physics and Technology

M1 - 104788

ER -

Trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method

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Keywords

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