Abstract
For extreme ultraviolet lithography (EUVL) targeting 45 nm technology generation and beyond, thermal absorption is the main source of multilayer-coated mirror structural deformation, which will finally cause degradation of lithographic performance. It becomes necessary to consider thermal absorption issue in the design phase of volume production tool. Utilizing several commercial and in-house software packages, we have performed a complete transient thermo-mechanical analysis of such effects and its impact on optical performance for volume production of EUVL. This article presents the simulation results based on wafer throughput model of 100 300mm wafers per hour for the 32nm technology generation.
Original language | English |
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Pages (from-to) | 6568-6572 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 46 |
Issue number | 10 A |
DOIs | |
Publication status | Published - 9 Oct 2007 |
Keywords
- Extreme ultraviolet lithography
- Mirror mount
- Projection optics
- Thermal and structural effect
- Thermo-mechanical analysis
- Zernike polynomials