Threshold magnetoresistance in anistropic magnetic 2D transition metal dichalcogenides

Hongjun Xu, Ming Chien Hsu, Huei Ru Fuh, Jiafeng Feng, Xiufeng Han, Yanfeng Zhao, Duan Zhang, Xinming Wang, Fang Liu, Huajun Liu, Jiung Cho, Miri Choi, Byong Sun Chun, Cormac Ó Coileáin, Zhi Wang, Mansoor B.A. Jalil, Han Chun Wu*, Ching Ray Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Recently many novel magnetoresistance (MR) phenomena have been reported from studies of two dimensional (2D) materials. Here, we report on the exotic transport behavior of VS2. A large negative and quadratic MR of -10% is observed for an in-plane magnetic field B up to 14 T. Remarkably, when the applied field deviates from the in-plane orientation there is a threshold field, Bc, and the MR shows a plateau of near zero MR. When B < Bc, only a single state exists and the transition between quantum spin states is forbidden. Our work sheds new light on the MR of magnetic 2D materials with localized states and may spur further investigations.

Original languageEnglish
Pages (from-to)3058-3064
Number of pages7
JournalJournal of Materials Chemistry C
Volume6
Issue number12
DOIs
Publication statusPublished - 2018

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