The digital geometric phase technique applied to the deformation evaluation of MEMS devices

Quantitative evaluation of the structure deformation of microfabricated electromechanical systems is of importance for the design and functional control of microsystems. In this investigation, a novel digital geometric phase technique was developed to meet the deformation evaluation requirement of microelectromechanical systems (MEMS). The technique is performed on the basis of regular artificial lattices, instead of a natural atom lattice. The regular artificial lattices with a pitch ranging from micrometer to nanometer will be directly fabricated on the measured surface of MEMS devices by using a focused ion beam (FIB). Phase information can be obtained from the Bragg filtered images after fast Fourier transform (FFT) and inverse fast Fourier transform (IFFT) of the scanning electronic microscope (SEM) images. Then the in-plane displacement field and the local strain field related to the phase information will be evaluated. The obtained results show that the technique can be well applied to deformation measurement with nanometer sensitivity and stiction force estimation of a MEMS device.