Strain dependent resistance in chemical vapor deposition grown graphene

Xue Wen Fu; Zhi Min Liao; Jian Xin Zhou; Yang Bo Zhou; Han Chun Wu; Rui Zhang; Guangyin Jing; Jun Xu; Xiaosong Wu; Wanlin Guo; Dapeng Yu

doi:10.1063/1.3663969

Strain dependent resistance in chemical vapor deposition grown graphene

Xue Wen Fu, Zhi Min Liao^*, Jian Xin Zhou, Yang Bo Zhou, Han Chun Wu, Rui Zhang, Guangyin Jing, Jun Xu, Xiaosong Wu, Wanlin Guo, Dapeng Yu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

223 Citations (Scopus)

Abstract

The strain dependence of conductance of monolayer graphene has been studied experimentally here. The results illustrate the notable transitions: the slight increase, the dramatic decrease, and the sudden dropping of the conductance by gradually increasing the uniaxial strain. The graphene conductance behaves reversibly by tuning of the elastic tensile strain up to 4.5, while it fails to recover after the plastic deformation at 5. The change in conductance due to strain is surprisingly high, which indicates the potential applications in electromechanical devices.

Original language	English
Article number	213107
Journal	Applied Physics Letters
Volume	99
Issue number	21
DOIs	https://doi.org/10.1063/1.3663969
Publication status	Published - 21 Nov 2011
Externally published	Yes

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@article{e6dd4e7b2be1418396c220196f8ebbc2,

title = "Strain dependent resistance in chemical vapor deposition grown graphene",

abstract = "The strain dependence of conductance of monolayer graphene has been studied experimentally here. The results illustrate the notable transitions: the slight increase, the dramatic decrease, and the sudden dropping of the conductance by gradually increasing the uniaxial strain. The graphene conductance behaves reversibly by tuning of the elastic tensile strain up to 4.5, while it fails to recover after the plastic deformation at 5. The change in conductance due to strain is surprisingly high, which indicates the potential applications in electromechanical devices.",

author = "Fu, {Xue Wen} and Liao, {Zhi Min} and Zhou, {Jian Xin} and Zhou, {Yang Bo} and Wu, {Han Chun} and Rui Zhang and Guangyin Jing and Jun Xu and Xiaosong Wu and Wanlin Guo and Dapeng Yu",

year = "2011",

month = nov,

day = "21",

doi = "10.1063/1.3663969",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "21",

}

TY - JOUR

T1 - Strain dependent resistance in chemical vapor deposition grown graphene

AU - Fu, Xue Wen

AU - Liao, Zhi Min

AU - Zhou, Jian Xin

AU - Zhou, Yang Bo

AU - Wu, Han Chun

AU - Zhang, Rui

AU - Jing, Guangyin

AU - Xu, Jun

AU - Wu, Xiaosong

AU - Guo, Wanlin

AU - Yu, Dapeng

PY - 2011/11/21

Y1 - 2011/11/21

N2 - The strain dependence of conductance of monolayer graphene has been studied experimentally here. The results illustrate the notable transitions: the slight increase, the dramatic decrease, and the sudden dropping of the conductance by gradually increasing the uniaxial strain. The graphene conductance behaves reversibly by tuning of the elastic tensile strain up to 4.5, while it fails to recover after the plastic deformation at 5. The change in conductance due to strain is surprisingly high, which indicates the potential applications in electromechanical devices.

AB - The strain dependence of conductance of monolayer graphene has been studied experimentally here. The results illustrate the notable transitions: the slight increase, the dramatic decrease, and the sudden dropping of the conductance by gradually increasing the uniaxial strain. The graphene conductance behaves reversibly by tuning of the elastic tensile strain up to 4.5, while it fails to recover after the plastic deformation at 5. The change in conductance due to strain is surprisingly high, which indicates the potential applications in electromechanical devices.

UR - http://www.scopus.com/inward/record.url?scp=81855222544&partnerID=8YFLogxK

U2 - 10.1063/1.3663969

DO - 10.1063/1.3663969

M3 - Article

AN - SCOPUS:81855222544

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 213107

ER -

Strain dependent resistance in chemical vapor deposition grown graphene

Abstract

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