Spin-orbit splitting in single-layer MoS2 revealed by triply resonant raman scattering

Linfeng Sun*, Jiaxu Yan, Da Zhan, Lei Liu, Hailong Hu, Hong Li, Ben Kang Tay, Jer Lai Kuo, Chung Che Huang, Daniel W. Hewak, Pooi See Lee, Ze Xiang Shen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

140 Citations (Scopus)

Abstract

Although new spintronic devices based on the giant spin-orbit splitting of single-layer MoS2 have been proposed, such splitting has not been studied effectively in experiments. This Letter reports the valence band spin-orbit splitting in single-layer MoS2 for the first time, probed by the triply resonant Raman scattering process. We found that upon 325 nm laser irradiation, the second order overtone and combination Raman modes of single-layer MoS2 are dramatically enhanced. Such resonant Raman enhancement arises from the electron-two-phonon triple resonance via the deformation potential and Fröhlich interaction. As a sensitive and precise probe for the spin-orbit splitting, the triply resonant Raman scattering will provide a new and independent route to study the spin characteristics of MoS2.

Original languageEnglish
Article number126801
JournalPhysical Review Letters
Volume111
Issue number12
DOIs
Publication statusPublished - 17 Sept 2013
Externally publishedYes

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