Single-step formation of graphene on dielectric surfaces

Wei Xiong; Yun Shen Zhou; Li Jia Jiang; Amitabha Sarkar; Masoud Mahjouri-Samani; Zhi Qiang Xie; Yang Gao; Natale Joseph Ianno; Lan Jiang; Yong Feng Lu

doi:10.1002/adma.201202840

Single-step formation of graphene on dielectric surfaces

Wei Xiong, Yun Shen Zhou, Li Jia Jiang, Amitabha Sarkar, Masoud Mahjouri-Samani, Zhi Qiang Xie, Yang Gao, Natale Joseph Ianno, Lan Jiang, Yong Feng Lu^*

^*Corresponding author for this work

School of Mechanical Engineering

University of Nebraska-Lincoln

Research output: Contribution to journal › Article › peer-review

76 Citations (Scopus)

Abstract

The direct formation of graphene on various dielectric surfaces is successful via a single-step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films. High-quality graphene is obtained uniformly on the whole surface of wafers with a controlled number of graphene layers. The monolayer graphene exhibits a low sheet resistance and a high optical transmittance in the visible range.

Original language	English
Pages (from-to)	630-634
Number of pages	5
Journal	Advanced Materials
Volume	25
Issue number	4
DOIs	https://doi.org/10.1002/adma.201202840
Publication status	Published - 25 Jan 2013

Keywords

Ni C
Ni evaporation
graphene
rapid thermal annealing
tansfer-free growth

Access to Document

10.1002/adma.201202840

Cite this

@article{40306a418a934ef0876bed222b30053e,

title = "Single-step formation of graphene on dielectric surfaces",

abstract = "The direct formation of graphene on various dielectric surfaces is successful via a single-step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films. High-quality graphene is obtained uniformly on the whole surface of wafers with a controlled number of graphene layers. The monolayer graphene exhibits a low sheet resistance and a high optical transmittance in the visible range.",

keywords = "Ni C, Ni evaporation, graphene, rapid thermal annealing, tansfer-free growth",

author = "Wei Xiong and Zhou, {Yun Shen} and Jiang, {Li Jia} and Amitabha Sarkar and Masoud Mahjouri-Samani and Xie, {Zhi Qiang} and Yang Gao and Ianno, {Natale Joseph} and Lan Jiang and Lu, {Yong Feng}",

year = "2013",

month = jan,

day = "25",

doi = "10.1002/adma.201202840",

language = "English",

volume = "25",

pages = "630--634",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-Blackwell",

number = "4",

}

TY - JOUR

T1 - Single-step formation of graphene on dielectric surfaces

AU - Xiong, Wei

AU - Zhou, Yun Shen

AU - Jiang, Li Jia

AU - Sarkar, Amitabha

AU - Mahjouri-Samani, Masoud

AU - Xie, Zhi Qiang

AU - Gao, Yang

AU - Ianno, Natale Joseph

AU - Jiang, Lan

AU - Lu, Yong Feng

PY - 2013/1/25

Y1 - 2013/1/25

N2 - The direct formation of graphene on various dielectric surfaces is successful via a single-step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films. High-quality graphene is obtained uniformly on the whole surface of wafers with a controlled number of graphene layers. The monolayer graphene exhibits a low sheet resistance and a high optical transmittance in the visible range.

AB - The direct formation of graphene on various dielectric surfaces is successful via a single-step rapid thermal processing (RTP) of substrates coated with amorphous carbon (C) and nickel (Ni) thin films. High-quality graphene is obtained uniformly on the whole surface of wafers with a controlled number of graphene layers. The monolayer graphene exhibits a low sheet resistance and a high optical transmittance in the visible range.

KW - Ni C

KW - Ni evaporation

KW - graphene

KW - rapid thermal annealing

KW - tansfer-free growth

UR - http://www.scopus.com/inward/record.url?scp=84872690702&partnerID=8YFLogxK

U2 - 10.1002/adma.201202840

DO - 10.1002/adma.201202840

M3 - Article

AN - SCOPUS:84872690702

SN - 0935-9648

VL - 25

SP - 630

EP - 634

JO - Advanced Materials

JF - Advanced Materials

IS - 4

ER -

Single-step formation of graphene on dielectric surfaces

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this