Shear strain induced modulation to the transport properties of graphene

Xin He; Li Gao; Ning Tang; Junxi Duan; Fujun Xu; Xinqiang Wang; Xuelin Yang; Weikun Ge; Bo Shen

doi:10.1063/1.4894082

Shear strain induced modulation to the transport properties of graphene

Xin He, Li Gao, Ning Tang^*, Junxi Duan, Fujun Xu, Xinqiang Wang, Xuelin Yang, Weikun Ge, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Applying shear strain has been considered as a hopeful method to open a band gap of graphene. To study the transport properties of graphene under shear strain, a device was fabricated to apply shear strain, up to 16.7%, to graphene grown by chemical vapor deposition method. A top gate with ionic liquid as the dielectric material was used to tune the carrier density. The conductance of the Dirac point and carrier mobility is found to increase with a comparatively small increasing strain but then decrease with a larger one. Such a behavior might be related to several factors: the wrinkles, the transverse conducting channels, and the grain boundaries of graphene. Our study is helpful to further understand the strain engineering in graphene.

Original language	English
Article number	083108
Journal	Applied Physics Letters
Volume	105
Issue number	8
DOIs	https://doi.org/10.1063/1.4894082
Publication status	Published - 25 Aug 2014
Externally published	Yes

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AU - He, Xin

AU - Gao, Li

AU - Tang, Ning

AU - Duan, Junxi

AU - Xu, Fujun

AU - Wang, Xinqiang

AU - Yang, Xuelin

AU - Ge, Weikun

AU - Shen, Bo

PY - 2014/8/25

Y1 - 2014/8/25

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AB - Applying shear strain has been considered as a hopeful method to open a band gap of graphene. To study the transport properties of graphene under shear strain, a device was fabricated to apply shear strain, up to 16.7%, to graphene grown by chemical vapor deposition method. A top gate with ionic liquid as the dielectric material was used to tune the carrier density. The conductance of the Dirac point and carrier mobility is found to increase with a comparatively small increasing strain but then decrease with a larger one. Such a behavior might be related to several factors: the wrinkles, the transverse conducting channels, and the grain boundaries of graphene. Our study is helpful to further understand the strain engineering in graphene.

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Shear strain induced modulation to the transport properties of graphene

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