@inproceedings{f279f9b8fce44976bc17c764d126fd87,
title = "Reduction of image optics dependence of resist image performance for high NA extreme ultraviolet lithography",
abstract = "High Numerical Aperture (NA) extreme ultraviolet lithography (EUVL) with different reduction is one option for 16 nm node and below. In our work, as NA increases to about 0.45, we discuss the impacts of reduction ratio of 5 or 6 on resist image performance such as Horizontal-Vertical (H-V) critical dimension (CD) bias for various incident angles and CD Uniformity induced by mask CD errors at wafer level. Commercial software PROLITH {\texttrademark} and in-house program are adopted in simulation referred above. In conclusion, resist image performance can be improved with the increase of reduction ratio. H-V CD Bias with reduction ratio of 6 is obviously smaller than that with reduction ratio of 5 at maximum incident angle. Additionally, CD Uniformity (nm, 3 sigma) induced by mask CD errors for 5x optics system is larger, which means image quality is worse at 5x optics system.",
keywords = "CD Uniformity, EUV lithography, High NA, reduction",
author = "Ouyang Chun and Yanqiu Li and Lihui Liu",
year = "2013",
doi = "10.1117/12.2053896",
language = "English",
isbn = "9780819499608",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "2013 International Conference on Optical Instruments and Technology",
address = "United States",
note = "2013 International Conference on Optical Instruments and Technology: Optical Systems and Modern Optoelectronic Instruments ; Conference date: 17-11-2013 Through 19-11-2013",
}