Thirugnanam, P., Xiong, W., Mahjouri-Samani, M., Fan, L., Raju, R., Mitchell, M., Gao, Y., Krishnan, B., Zhou, Y. S., Jiang, L., & Lu, Y. F. (2013). Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition. Crystal Growth and Design, 13(7), 3171-3176. https://doi.org/10.1021/cg400541e
Thirugnanam, P. ; Xiong, W. ; Mahjouri-Samani, M. et al. / Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition. In: Crystal Growth and Design. 2013 ; Vol. 13, No. 7. pp. 3171-3176.
@article{afb3674cbfda45d1958ad26381af64c3,
title = "Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition",
abstract = "The m-plane-oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates at 450 C, using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and <101{\`I}...0> orientation of the nanoplates were confirmed using high-resolution electron microscopes. GaN nanoplates served as seed crystals for the subsequent growth of m-plane-oriented interlinked GaN nanoplates at a longer growth time. The strong A1 (TO) mode in Raman spectra and the (101{\`I}...0) peak in X-ray diffraction confirmed the m plane orientation of the nanoplates. The interlinked GaN nanoplates showed a high-growth rate of ∼38 μm/h. The results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane-oriented GaN nanoplates on the Si substrates at low-growth temperatures.",
author = "P. Thirugnanam and W. Xiong and M. Mahjouri-Samani and L. Fan and R. Raju and M. Mitchell and Y. Gao and B. Krishnan and Zhou, {Y. S.} and L. Jiang and Lu, {Y. F.}",
year = "2013",
month = jul,
day = "3",
doi = "10.1021/cg400541e",
language = "English",
volume = "13",
pages = "3171--3176",
journal = "Crystal Growth and Design",
issn = "1528-7483",
publisher = "American Chemical Society",
number = "7",
}
Thirugnanam, P, Xiong, W, Mahjouri-Samani, M, Fan, L, Raju, R, Mitchell, M, Gao, Y, Krishnan, B, Zhou, YS, Jiang, L & Lu, YF 2013, 'Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition', Crystal Growth and Design, vol. 13, no. 7, pp. 3171-3176. https://doi.org/10.1021/cg400541e
Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition. / Thirugnanam, P.; Xiong, W.; Mahjouri-Samani, M. et al.
In:
Crystal Growth and Design, Vol. 13, No. 7, 03.07.2013, p. 3171-3176.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition
AU - Thirugnanam, P.
AU - Xiong, W.
AU - Mahjouri-Samani, M.
AU - Fan, L.
AU - Raju, R.
AU - Mitchell, M.
AU - Gao, Y.
AU - Krishnan, B.
AU - Zhou, Y. S.
AU - Jiang, L.
AU - Lu, Y. F.
PY - 2013/7/3
Y1 - 2013/7/3
N2 - The m-plane-oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates at 450 C, using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and <101Ì...0> orientation of the nanoplates were confirmed using high-resolution electron microscopes. GaN nanoplates served as seed crystals for the subsequent growth of m-plane-oriented interlinked GaN nanoplates at a longer growth time. The strong A1 (TO) mode in Raman spectra and the (101Ì...0) peak in X-ray diffraction confirmed the m plane orientation of the nanoplates. The interlinked GaN nanoplates showed a high-growth rate of ∼38 μm/h. The results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane-oriented GaN nanoplates on the Si substrates at low-growth temperatures.
AB - The m-plane-oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates at 450 C, using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and <101Ì...0> orientation of the nanoplates were confirmed using high-resolution electron microscopes. GaN nanoplates served as seed crystals for the subsequent growth of m-plane-oriented interlinked GaN nanoplates at a longer growth time. The strong A1 (TO) mode in Raman spectra and the (101Ì...0) peak in X-ray diffraction confirmed the m plane orientation of the nanoplates. The interlinked GaN nanoplates showed a high-growth rate of ∼38 μm/h. The results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane-oriented GaN nanoplates on the Si substrates at low-growth temperatures.
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U2 - 10.1021/cg400541e
DO - 10.1021/cg400541e
M3 - Article
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SN - 1528-7483
VL - 13
SP - 3171
EP - 3176
JO - Crystal Growth and Design
JF - Crystal Growth and Design
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ER -
Thirugnanam P, Xiong W, Mahjouri-Samani M, Fan L, Raju R, Mitchell M et al. Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition. Crystal Growth and Design. 2013 Jul 3;13(7):3171-3176. doi: 10.1021/cg400541e
