Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition

P. Thirugnanam; W. Xiong; M. Mahjouri-Samani; L. Fan; R. Raju; M. Mitchell; Y. Gao; B. Krishnan; Y. S. Zhou; L. Jiang; Y. F. Lu

doi:10.1021/cg400541e

Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition

P. Thirugnanam, W. Xiong, M. Mahjouri-Samani, L. Fan, R. Raju, M. Mitchell, Y. Gao, B. Krishnan, Y. S. Zhou, L. Jiang, Y. F. Lu^*

^*Corresponding author for this work

School of Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The m-plane-oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates at 450 C, using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and <101Ì...0> orientation of the nanoplates were confirmed using high-resolution electron microscopes. GaN nanoplates served as seed crystals for the subsequent growth of m-plane-oriented interlinked GaN nanoplates at a longer growth time. The strong A₁ (TO) mode in Raman spectra and the (101Ì...0) peak in X-ray diffraction confirmed the m plane orientation of the nanoplates. The interlinked GaN nanoplates showed a high-growth rate of ∼38 μm/h. The results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane-oriented GaN nanoplates on the Si substrates at low-growth temperatures.

Original language	English
Pages (from-to)	3171-3176
Number of pages	6
Journal	Crystal Growth and Design
Volume	13
Issue number	7
DOIs	https://doi.org/10.1021/cg400541e
Publication status	Published - 3 Jul 2013

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Thirugnanam, P., Xiong, W., Mahjouri-Samani, M., Fan, L., Raju, R., Mitchell, M., Gao, Y., Krishnan, B., Zhou, Y. S., Jiang, L., & Lu, Y. F. (2013). Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition. Crystal Growth and Design, 13(7), 3171-3176. https://doi.org/10.1021/cg400541e

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title = "Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition",

abstract = "The m-plane-oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates at 450 C, using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and <101{\`I}...0> orientation of the nanoplates were confirmed using high-resolution electron microscopes. GaN nanoplates served as seed crystals for the subsequent growth of m-plane-oriented interlinked GaN nanoplates at a longer growth time. The strong A1 (TO) mode in Raman spectra and the (101{\`I}...0) peak in X-ray diffraction confirmed the m plane orientation of the nanoplates. The interlinked GaN nanoplates showed a high-growth rate of ∼38 μm/h. The results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane-oriented GaN nanoplates on the Si substrates at low-growth temperatures.",

author = "P. Thirugnanam and W. Xiong and M. Mahjouri-Samani and L. Fan and R. Raju and M. Mitchell and Y. Gao and B. Krishnan and Zhou, {Y. S.} and L. Jiang and Lu, {Y. F.}",

year = "2013",

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doi = "10.1021/cg400541e",

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T1 - Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition

AU - Thirugnanam, P.

AU - Xiong, W.

AU - Mahjouri-Samani, M.

AU - Fan, L.

AU - Raju, R.

AU - Mitchell, M.

AU - Gao, Y.

AU - Krishnan, B.

AU - Zhou, Y. S.

AU - Jiang, L.

AU - Lu, Y. F.

PY - 2013/7/3

Y1 - 2013/7/3

N2 - The m-plane-oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates at 450 C, using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and <101Ì...0> orientation of the nanoplates were confirmed using high-resolution electron microscopes. GaN nanoplates served as seed crystals for the subsequent growth of m-plane-oriented interlinked GaN nanoplates at a longer growth time. The strong A1 (TO) mode in Raman spectra and the (101Ì...0) peak in X-ray diffraction confirmed the m plane orientation of the nanoplates. The interlinked GaN nanoplates showed a high-growth rate of ∼38 μm/h. The results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane-oriented GaN nanoplates on the Si substrates at low-growth temperatures.

AB - The m-plane-oriented gallium nitride (GaN) nanoplates were successfully grown on silicon (Si) substrates at 450 C, using laser-assisted metal organic chemical vapor deposition (L-MOCVD). The morphology and <101Ì...0> orientation of the nanoplates were confirmed using high-resolution electron microscopes. GaN nanoplates served as seed crystals for the subsequent growth of m-plane-oriented interlinked GaN nanoplates at a longer growth time. The strong A1 (TO) mode in Raman spectra and the (101Ì...0) peak in X-ray diffraction confirmed the m plane orientation of the nanoplates. The interlinked GaN nanoplates showed a high-growth rate of ∼38 μm/h. The results suggest that L-MOCVD is a promising technique for the rapid growth of m-plane-oriented GaN nanoplates on the Si substrates at low-growth temperatures.

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DO - 10.1021/cg400541e

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SN - 1528-7483

VL - 13

SP - 3171

EP - 3176

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 7

ER -

Rapid growth of m-plane oriented gallium nitride nanoplates on silicon substrate using laser-assisted metal organic chemical vapor deposition

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