Pan, Y., Jian, T., Gu, P., Song, Y., Wang, Q., Han, B., Ran, Y., Pan, Z., Li, Y., Xu, W., Gao, P., Zhang, C., He, J., Xu, X., & Ye, Y. (2024). Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits. Nature Communications, 15(1), Article 9631. https://doi.org/10.1038/s41467-024-54050-2
Pan, Yu ; Jian, Tao ; Gu, Pingfan et al. / Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits. In: Nature Communications. 2024 ; Vol. 15, No. 1.
@article{2914a1378222488db6a86839134ef521,
title = "Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits",
abstract = "The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe2 thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe2 thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology.",
author = "Yu Pan and Tao Jian and Pingfan Gu and Yiwen Song and Qi Wang and Bo Han and Yuqia Ran and Zemin Pan and Yanping Li and Wanjin Xu and Peng Gao and Chendong Zhang and Jun He and Xiaolong Xu and Yu Ye",
note = "Publisher Copyright: {\textcopyright} The Author(s) 2024.",
year = "2024",
month = dec,
doi = "10.1038/s41467-024-54050-2",
language = "English",
volume = "15",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",
number = "1",
}
Pan, Y, Jian, T, Gu, P, Song, Y, Wang, Q, Han, B, Ran, Y, Pan, Z, Li, Y, Xu, W, Gao, P, Zhang, C, He, J, Xu, X & Ye, Y 2024, 'Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits', Nature Communications, vol. 15, no. 1, 9631. https://doi.org/10.1038/s41467-024-54050-2
Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits. / Pan, Yu; Jian, Tao; Gu, Pingfan et al.
In:
Nature Communications, Vol. 15, No. 1, 9631, 12.2024.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits
AU - Pan, Yu
AU - Jian, Tao
AU - Gu, Pingfan
AU - Song, Yiwen
AU - Wang, Qi
AU - Han, Bo
AU - Ran, Yuqia
AU - Pan, Zemin
AU - Li, Yanping
AU - Xu, Wanjin
AU - Gao, Peng
AU - Zhang, Chendong
AU - He, Jun
AU - Xu, Xiaolong
AU - Ye, Yu
N1 - Publisher Copyright:
© The Author(s) 2024.
PY - 2024/12
Y1 - 2024/12
N2 - The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe2 thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe2 thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology.
AB - The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe2 thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe2 thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology.
UR - http://www.scopus.com/inward/record.url?scp=85209104187&partnerID=8YFLogxK
U2 - 10.1038/s41467-024-54050-2
DO - 10.1038/s41467-024-54050-2
M3 - Article
C2 - 39511212
AN - SCOPUS:85209104187
SN - 2041-1723
VL - 15
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 9631
ER -
Pan Y, Jian T, Gu P, Song Y, Wang Q, Han B et al. Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits. Nature Communications. 2024 Dec;15(1):9631. doi: 10.1038/s41467-024-54050-2