Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits

Yu Pan, Tao Jian, Pingfan Gu, Yiwen Song, Qi Wang, Bo Han, Yuqia Ran, Zemin Pan, Yanping Li, Wanjin Xu, Peng Gao, Chendong Zhang*, Jun He*, Xiaolong Xu*, Yu Ye*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The controllable fabrication of patterned p-type and n-type channels with precise doping control presents a significant challenge, impeding the realization of complementary metal-oxide-semiconductor (CMOS) logic using a single van der Waals material. However, such an achievement could offer substantial benefits by enabling continued transistor scaling and unprecedented interlayer interconnect technologies. In this study, we devise a precise method for two-dimensional (2D) semiconductor substitutional doping, which allows for the production of wafer-scale 2H-MoTe2 thin films with specific p-type or n-type doping. Notably, we extend this approach to the synthesis of spatially selective doped 2H-MoTe2 thin films via a one-step growth method, facilitating the monolithic integration of p-type and n-type semiconductor channels. Leveraging this advancement, we successfully fabricate a chip-sized 2D CMOS inverter array that demonstrates excellent device performance and yield. Collectively, these findings represent a significant stride towards the practical incorporation of 2D semiconductors in very large-scale integration technology.

Original languageEnglish
Article number9631
JournalNature Communications
Volume15
Issue number1
DOIs
Publication statusPublished - Dec 2024

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Pan, Y., Jian, T., Gu, P., Song, Y., Wang, Q., Han, B., Ran, Y., Pan, Z., Li, Y., Xu, W., Gao, P., Zhang, C., He, J., Xu, X., & Ye, Y. (2024). Precise p-type and n-type doping of two-dimensional semiconductors for monolithic integrated circuits. Nature Communications, 15(1), Article 9631. https://doi.org/10.1038/s41467-024-54050-2