Photon wavelength dependent valley photocurrent in multilayer MoS2

Hongming Guan; Ning Tang; Xiaolong Xu; Liangliang Shang; Wei Huang; Lei Fu; Xianfa Fang; Jiachen Yu; Caifeng Zhang; Xiaoyue Zhang; Lun Dai; Yonghai Chen; Weikun Ge; Bo Shen

doi:10.1103/PhysRevB.96.241304

Photon wavelength dependent valley photocurrent in multilayer MoS2

Hongming Guan, Ning Tang^*, Xiaolong Xu, Liangliang Shang, Wei Huang, Lei Fu, Xianfa Fang, Jiachen Yu, Caifeng Zhang, Xiaoyue Zhang, Lun Dai, Yonghai Chen, Weikun Ge, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The degree of freedom (DOF) of the K (K′) valley in transition-metal dichalcogenides, especially molybdenum disulfide (MoS2), offers an opportunity for next-generation valleytronics devices. In this work, the K (K′) valley DOF of multilayer MoS2 is studied by means of the photon wavelength dependent circular photogalvanic effect (CPGE) at room temperature upon a strong external out-of-plane electric field induced by an ionic liquid (IL) gate, which breaks the spatial-inversion symmetry. It is demonstrated that only on resonant excitations in the K (K′) valley can the valley-related CPGE signals in multilayer MoS2 with an IL gate be detected, indicating that the valley contrast is indeed regenerated between the K and K′ valleys when the electric field is applied. As expected, it can also be seen that the K (K′) valley DOF in multilayer MoS2 can be modulated by the external electric field. The observation of photon wavelength dependent valley photocurrent in multilayer MoS2, with the help of better Ohmic contacts, may pave a way for optoelectronic applications of valleytronics in the future.

Original language	English
Article number	241304
Journal	Physical Review B
Volume	96
Issue number	24
DOIs	https://doi.org/10.1103/PhysRevB.96.241304
Publication status	Published - 21 Dec 2017
Externally published	Yes

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10.1103/PhysRevB.96.241304

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@article{fd2292a0539f4ae3a0d43e78f8d91f07,

title = "Photon wavelength dependent valley photocurrent in multilayer MoS2",

abstract = "The degree of freedom (DOF) of the K (K′) valley in transition-metal dichalcogenides, especially molybdenum disulfide (MoS2), offers an opportunity for next-generation valleytronics devices. In this work, the K (K′) valley DOF of multilayer MoS2 is studied by means of the photon wavelength dependent circular photogalvanic effect (CPGE) at room temperature upon a strong external out-of-plane electric field induced by an ionic liquid (IL) gate, which breaks the spatial-inversion symmetry. It is demonstrated that only on resonant excitations in the K (K′) valley can the valley-related CPGE signals in multilayer MoS2 with an IL gate be detected, indicating that the valley contrast is indeed regenerated between the K and K′ valleys when the electric field is applied. As expected, it can also be seen that the K (K′) valley DOF in multilayer MoS2 can be modulated by the external electric field. The observation of photon wavelength dependent valley photocurrent in multilayer MoS2, with the help of better Ohmic contacts, may pave a way for optoelectronic applications of valleytronics in the future.",

author = "Hongming Guan and Ning Tang and Xiaolong Xu and Liangliang Shang and Wei Huang and Lei Fu and Xianfa Fang and Jiachen Yu and Caifeng Zhang and Xiaoyue Zhang and Lun Dai and Yonghai Chen and Weikun Ge and Bo Shen",

note = "Publisher Copyright: {\textcopyright} 2017 American Physical Society.",

year = "2017",

month = dec,

day = "21",

doi = "10.1103/PhysRevB.96.241304",

language = "English",

volume = "96",

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TY - JOUR

T1 - Photon wavelength dependent valley photocurrent in multilayer MoS2

AU - Guan, Hongming

AU - Tang, Ning

AU - Xu, Xiaolong

AU - Shang, Liangliang

AU - Huang, Wei

AU - Fu, Lei

AU - Fang, Xianfa

AU - Yu, Jiachen

AU - Zhang, Caifeng

AU - Zhang, Xiaoyue

AU - Dai, Lun

AU - Chen, Yonghai

AU - Ge, Weikun

AU - Shen, Bo

PY - 2017/12/21

Y1 - 2017/12/21

N2 - The degree of freedom (DOF) of the K (K′) valley in transition-metal dichalcogenides, especially molybdenum disulfide (MoS2), offers an opportunity for next-generation valleytronics devices. In this work, the K (K′) valley DOF of multilayer MoS2 is studied by means of the photon wavelength dependent circular photogalvanic effect (CPGE) at room temperature upon a strong external out-of-plane electric field induced by an ionic liquid (IL) gate, which breaks the spatial-inversion symmetry. It is demonstrated that only on resonant excitations in the K (K′) valley can the valley-related CPGE signals in multilayer MoS2 with an IL gate be detected, indicating that the valley contrast is indeed regenerated between the K and K′ valleys when the electric field is applied. As expected, it can also be seen that the K (K′) valley DOF in multilayer MoS2 can be modulated by the external electric field. The observation of photon wavelength dependent valley photocurrent in multilayer MoS2, with the help of better Ohmic contacts, may pave a way for optoelectronic applications of valleytronics in the future.

AB - The degree of freedom (DOF) of the K (K′) valley in transition-metal dichalcogenides, especially molybdenum disulfide (MoS2), offers an opportunity for next-generation valleytronics devices. In this work, the K (K′) valley DOF of multilayer MoS2 is studied by means of the photon wavelength dependent circular photogalvanic effect (CPGE) at room temperature upon a strong external out-of-plane electric field induced by an ionic liquid (IL) gate, which breaks the spatial-inversion symmetry. It is demonstrated that only on resonant excitations in the K (K′) valley can the valley-related CPGE signals in multilayer MoS2 with an IL gate be detected, indicating that the valley contrast is indeed regenerated between the K and K′ valleys when the electric field is applied. As expected, it can also be seen that the K (K′) valley DOF in multilayer MoS2 can be modulated by the external electric field. The observation of photon wavelength dependent valley photocurrent in multilayer MoS2, with the help of better Ohmic contacts, may pave a way for optoelectronic applications of valleytronics in the future.

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DO - 10.1103/PhysRevB.96.241304

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VL - 96

JO - Physical Review B

JF - Physical Review B

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Photon wavelength dependent valley photocurrent in multilayer MoS2

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