TY - JOUR
T1 - Phonon mode calculations and Raman spectroscopy of the bulk-insulating topological insulator BiSbTeSe2
AU - German, Raphael
AU - Komleva, Evgenia V.
AU - Stein, Philipp
AU - Mazurenko, Vladimir G.
AU - Wang, Zhiwei
AU - Streltsov, Sergey V.
AU - Ando, Yoichi
AU - Van Loosdrecht, Paul H.M.
N1 - Publisher Copyright:
© 2019 American Physical Society.
PY - 2019/5/17
Y1 - 2019/5/17
N2 - The tetradymite compound BiSbTeSe2 is one of the most bulk-insulating three-dimensional topological insulators, which makes it important in topological insulator research. It is a member of the solid-solution system Bi2-xSbxTe3-ySey, for which the local crystal structure, such as the occupation probabilities of each atomic site, is not well understood. We have investigated the temperature- and polarization-dependent spontaneous Raman scattering in BiSbTeSe2, revealing a much higher number of lattice vibrational modes than predicted by group-theoretical considerations for the space group R3m corresponding to an ideally random solid-solution situation. The density-functional calculations of phonon frequencies show a very good agreement with experimental data for parent material Bi2Te3, where no disorder effects were found. In comparison to Bi2Te3 the stacking disorder in BiSbTeSe2 causes a discrepancy between theory and experiment. Combined analysis of experimental Raman spectra and density-functional-theory-calculated phonon spectra for different types of atomic orders showed coexistence of different sequences of layers in the material and that those with Se in the center and a local order of Se-Bi-Se-Sb-Te are the most favored.
AB - The tetradymite compound BiSbTeSe2 is one of the most bulk-insulating three-dimensional topological insulators, which makes it important in topological insulator research. It is a member of the solid-solution system Bi2-xSbxTe3-ySey, for which the local crystal structure, such as the occupation probabilities of each atomic site, is not well understood. We have investigated the temperature- and polarization-dependent spontaneous Raman scattering in BiSbTeSe2, revealing a much higher number of lattice vibrational modes than predicted by group-theoretical considerations for the space group R3m corresponding to an ideally random solid-solution situation. The density-functional calculations of phonon frequencies show a very good agreement with experimental data for parent material Bi2Te3, where no disorder effects were found. In comparison to Bi2Te3 the stacking disorder in BiSbTeSe2 causes a discrepancy between theory and experiment. Combined analysis of experimental Raman spectra and density-functional-theory-calculated phonon spectra for different types of atomic orders showed coexistence of different sequences of layers in the material and that those with Se in the center and a local order of Se-Bi-Se-Sb-Te are the most favored.
UR - http://www.scopus.com/inward/record.url?scp=85065976685&partnerID=8YFLogxK
U2 - 10.1103/PhysRevMaterials.3.054204
DO - 10.1103/PhysRevMaterials.3.054204
M3 - Article
AN - SCOPUS:85065976685
SN - 2475-9953
VL - 3
JO - Physical Review Materials
JF - Physical Review Materials
IS - 5
M1 - 054204
ER -