TY - JOUR
T1 - Pentacene-based photodetector in visible region with vertical field-effect transistor configuration
AU - Yang, Dan
AU - Zhang, Li
AU - Wang, Haowei
AU - Wang, Yishan
AU - Li, Zhixiao
AU - Song, Taojian
AU - Fu, Chunjie
AU - Yang, Shengyi
AU - Zou, Bingsuo
N1 - Publisher Copyright:
© 1989-2012 IEEE.
PY - 2015/2/1
Y1 - 2015/2/1
N2 - Electrical and detection performances of pentacene-based photodetector with vertical field-effect transistor (VFET) configuration were investigated in full visible region. By comparing with planar FET-based photodetector ITO/ PMMA(520 nm)/Pentacene(35 nm)/Au, the VFET-based photo-detector ITO/Pentacene(80 nm)/Al(15 nm)/Pentacene(80 nm)/ Au exhibits better performance. At an output current of ca. -8× 10-7 A, the threshold voltage ( V th ) was -0.61 V for the VFET-based device at VDS = -2 V, but Vth = -7.1 V for the planar one at VDS = -12 V. The performance of photodetectors depends on incident monochromatic light, and the VFET-based photodetector showed a maximum responsivity of 188 mA/W and a photosensitivity peak of 588 under 350-nm light, which were ∼ 11.75 and 2.83 times as that of the planar one, respectively. Therefore, it provides an easy way to get the VFET-based organic photodetectors in full visible region with excellent photosensitivity, responsivity, and light selectivity, showing its promising application in all-organic image sensors working at low voltages.
AB - Electrical and detection performances of pentacene-based photodetector with vertical field-effect transistor (VFET) configuration were investigated in full visible region. By comparing with planar FET-based photodetector ITO/ PMMA(520 nm)/Pentacene(35 nm)/Au, the VFET-based photo-detector ITO/Pentacene(80 nm)/Al(15 nm)/Pentacene(80 nm)/ Au exhibits better performance. At an output current of ca. -8× 10-7 A, the threshold voltage ( V th ) was -0.61 V for the VFET-based device at VDS = -2 V, but Vth = -7.1 V for the planar one at VDS = -12 V. The performance of photodetectors depends on incident monochromatic light, and the VFET-based photodetector showed a maximum responsivity of 188 mA/W and a photosensitivity peak of 588 under 350-nm light, which were ∼ 11.75 and 2.83 times as that of the planar one, respectively. Therefore, it provides an easy way to get the VFET-based organic photodetectors in full visible region with excellent photosensitivity, responsivity, and light selectivity, showing its promising application in all-organic image sensors working at low voltages.
KW - Vertical organic field-effect transistor (VOFET)
KW - organic photodetectors
KW - pentacene
KW - photosensitivity
KW - responsivity
UR - http://www.scopus.com/inward/record.url?scp=84921381509&partnerID=8YFLogxK
U2 - 10.1109/LPT.2014.2365498
DO - 10.1109/LPT.2014.2365498
M3 - Article
AN - SCOPUS:84921381509
SN - 1041-1135
VL - 27
SP - 233
EP - 236
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 3
M1 - 6937168
ER -