TY - JOUR
T1 - Observation of Topological Edge States at the Step Edges on the Surface of Type-II Weyl Semimetal TaIrTe4
AU - Dong, Xu
AU - Wang, Maoyuan
AU - Yan, Dayu
AU - Peng, Xianglin
AU - Li, Ji
AU - Xiao, Wende
AU - Wang, Qinsheng
AU - Han, Junfeng
AU - Ma, Jie
AU - Shi, Youguo
AU - Yao, Yugui
N1 - Publisher Copyright:
Copyright © 2019 American Chemical Society.
PY - 2019/8/27
Y1 - 2019/8/27
N2 - Topological materials harbor topologically protected boundary states. Recently, TaIrTe4, a ternary transition-metal dichalcogenide, was identified as a type-II Weyl semimetal with the minimal nonzero number of Weyl points allowed for a time-reversal invariant Weyl semimetal. Monolayer TaIrTe4 was proposed to host topological edge states, which, however, lacks of experimental evidence. Here, we report on the topological edge states localized at the monolayer step edges of the type-II Weyl semimetal TaIrTe4 using scanning tunneling microscopy. One-dimensional electronic states that show substantial robustness against the edge irregularity are observed at the step edges. Theoretical calculations substantiate the topologically nontrivial nature of the edge states and their robustness against the edge termination and layer stacking. The observation of topological edge states at the step edges of TaIrTe4 surfaces suggests that monolayer TaIrTe4 is a two-dimensional topological insulator, providing TaIrTe4 as a promising material for topological physics and devices.
AB - Topological materials harbor topologically protected boundary states. Recently, TaIrTe4, a ternary transition-metal dichalcogenide, was identified as a type-II Weyl semimetal with the minimal nonzero number of Weyl points allowed for a time-reversal invariant Weyl semimetal. Monolayer TaIrTe4 was proposed to host topological edge states, which, however, lacks of experimental evidence. Here, we report on the topological edge states localized at the monolayer step edges of the type-II Weyl semimetal TaIrTe4 using scanning tunneling microscopy. One-dimensional electronic states that show substantial robustness against the edge irregularity are observed at the step edges. Theoretical calculations substantiate the topologically nontrivial nature of the edge states and their robustness against the edge termination and layer stacking. The observation of topological edge states at the step edges of TaIrTe4 surfaces suggests that monolayer TaIrTe4 is a two-dimensional topological insulator, providing TaIrTe4 as a promising material for topological physics and devices.
KW - Weyl semimetal
KW - scanning tunneling microscopy
KW - scanning tunneling spectroscopy
KW - topological edge states
KW - two-dimensional topological insulator
UR - http://www.scopus.com/inward/record.url?scp=85070905458&partnerID=8YFLogxK
U2 - 10.1021/acsnano.9b04573
DO - 10.1021/acsnano.9b04573
M3 - Article
C2 - 31365228
AN - SCOPUS:85070905458
SN - 1936-0851
VL - 13
SP - 9571
EP - 9577
JO - ACS Nano
JF - ACS Nano
IS - 8
ER -