Negative differential resistances in graphene double barrier resonant tunneling diodes

Yu Song*, Han Chun Wu, Yong Guo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that the NDR feature only presents with appropriate structural parameters for the massless case, and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter.

Original languageEnglish
Article number093118
JournalApplied Physics Letters
Volume102
Issue number9
DOIs
Publication statusPublished - 4 Mar 2013
Externally publishedYes

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