Abstract
We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics calculated in a rotated pseudospin space show that the NDR feature only presents with appropriate structural parameters for the massless case, and the peak-to-valley current ratio can be enhanced exponentially by a tunable band gap. Remarkably, the lowest NDR operation window is nearly structure-free and can be almost solely controlled by a back gate, which may have potential applications in NDR devices with the operation window as a crucial parameter.
Original language | English |
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Article number | 093118 |
Journal | Applied Physics Letters |
Volume | 102 |
Issue number | 9 |
DOIs | |
Publication status | Published - 4 Mar 2013 |
Externally published | Yes |