Negative differential resistance phenomena in colloidal quantum dots-based organic light-emitting diodes

Shengyi Yang*, Peng Liu, Sanwei Guo, Li Zhang, Dan Yang, Yurong Jiang, Bingsuo Zou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The influence of ligands on the electrical behavior of CdSe/ZnS core-shell colloidal quantum dots (CQDs)-based organic light-emitting diodes is presented. Negative differential resistance (NDR) phenomena at room temperature are observed from single-layer device ITO/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/CQDs/Al in which the original capping ligand tri-n-octylphosphine oxide (TOPO) of CQDs is exchanged with oleylamine, as well as in both bilayer device ITO/PEDOT:PSS/CQDs/BCP(10 nm)/Al and trilayer device ITO/PEDOT:PSS/CQDs/BCP(10 nm)/Alq3(10 nm)/Al. However, such a kind of NDR phenomenon disappears if TOPO is exchanged with hexadecylamine. Therefore, NDR phenomenon depends greatly on the ligands of the CQDs, and the origin of NDR from these devices is discussed.

Original languageEnglish
Article number033301
JournalApplied Physics Letters
Volume104
Issue number3
DOIs
Publication statusPublished - 20 Jan 2014

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