TY - JOUR
T1 - Nanoscale Photo-Absorbing Kesterite Grown on Anatase Mesoscopic Films by Sequential Binary Chalcogenide Solution Deposition-Exchange, Annealing, and Etching
AU - Wang, Zhuoran
AU - Demopoulos, George P.
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/7/6
Y1 - 2016/7/6
N2 - Cu2ZnSnS4 (CZTS) with kesterite crystal structure is considered a promising semiconductor material for photovoltaics due to its excellent optical properties and nontoxic, earth-abundant components. In this work, the nanoscale coating of CZTS on anatase mesoscopic films is studied to build an absorber (kesterite)-conductor (anatase) photoanode structure with high composition uniformity - a challenge for complex absorbers like quaternary CZTS. To this end, we first develop a three-step binary chalcogenide solution deposition-exchange sequence for precursor preparation that is followed by in-depth analysis of the deposit-forming chemical reactions and characterization of elemental distribution and composition control. Then, crystallization is induced by annealing at 500 °C for 1 h, followed by an additional hydrochloric acid etching step to remove secondary binary phases and surface imperfections leading to improved composition of a CZTS/TiO2 film as a candidate for use in kesterite-sensitized solar cells.
AB - Cu2ZnSnS4 (CZTS) with kesterite crystal structure is considered a promising semiconductor material for photovoltaics due to its excellent optical properties and nontoxic, earth-abundant components. In this work, the nanoscale coating of CZTS on anatase mesoscopic films is studied to build an absorber (kesterite)-conductor (anatase) photoanode structure with high composition uniformity - a challenge for complex absorbers like quaternary CZTS. To this end, we first develop a three-step binary chalcogenide solution deposition-exchange sequence for precursor preparation that is followed by in-depth analysis of the deposit-forming chemical reactions and characterization of elemental distribution and composition control. Then, crystallization is induced by annealing at 500 °C for 1 h, followed by an additional hydrochloric acid etching step to remove secondary binary phases and surface imperfections leading to improved composition of a CZTS/TiO2 film as a candidate for use in kesterite-sensitized solar cells.
UR - http://www.scopus.com/inward/record.url?scp=84978081280&partnerID=8YFLogxK
U2 - 10.1021/acs.cgd.6b00033
DO - 10.1021/acs.cgd.6b00033
M3 - Article
AN - SCOPUS:84978081280
SN - 1528-7483
VL - 16
SP - 3618
EP - 3630
JO - Crystal Growth and Design
JF - Crystal Growth and Design
IS - 7
ER -