TY - JOUR
T1 - Nanoengineering of the Cu2ZnSnS4-TiO2 interface
T2 - Via atomic layer deposition of Al2O3 for high sensitivity photodetectors and solid state solar cells
AU - Wang, Zhuoran
AU - Brodusch, Nicolas
AU - Gauvin, Raynald
AU - Demopoulos, George P.
N1 - Publisher Copyright:
© The Royal Society of Chemistry 2018.
PY - 2018
Y1 - 2018
N2 - In this work, it is demonstrated that by applying a nanoscale Al2O3 film via atomic layer deposition (ALD) to the Cu2ZnSnS4-TiO2 p/n junction, the adverse Sn doping effect is prevented and band alignment is optimized. EDS f-ratio mapping and XANES are used to confirm the purity and nanoscale homogeneity of CZTS. Thanks to the engineered interface by ALD Al2O3, high sensitivity photodetectors are designed exhibiting a novel voltage alterable spectral photoresponse. By further integrating a CdS interfacial layer, a TiO2-Al2O3-CZTS/Spiro-OMeTAD/Au solid state nanostructured solar cell is eventually fabricated with an enhanced energy conversion efficiency of 4.2%.
AB - In this work, it is demonstrated that by applying a nanoscale Al2O3 film via atomic layer deposition (ALD) to the Cu2ZnSnS4-TiO2 p/n junction, the adverse Sn doping effect is prevented and band alignment is optimized. EDS f-ratio mapping and XANES are used to confirm the purity and nanoscale homogeneity of CZTS. Thanks to the engineered interface by ALD Al2O3, high sensitivity photodetectors are designed exhibiting a novel voltage alterable spectral photoresponse. By further integrating a CdS interfacial layer, a TiO2-Al2O3-CZTS/Spiro-OMeTAD/Au solid state nanostructured solar cell is eventually fabricated with an enhanced energy conversion efficiency of 4.2%.
UR - http://www.scopus.com/inward/record.url?scp=85048784818&partnerID=8YFLogxK
U2 - 10.1039/c8ta02966k
DO - 10.1039/c8ta02966k
M3 - Article
AN - SCOPUS:85048784818
SN - 2050-7488
VL - 6
SP - 11507
EP - 11520
JO - Journal of Materials Chemistry A
JF - Journal of Materials Chemistry A
IS - 24
ER -
