MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Xiao Wen Zhang; Dan Xie; Jian Long Xu; Yi Lin Sun; Xian Li; Cheng Zhang; Rui Xuan Dai; Yuan Fan Zhao; Xin Ming Li; Xiao Li; Hong Wei Zhu

doi:10.1109/LED.2015.2440249

MoS₂ Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

Xiao Wen Zhang, Dan Xie, Jian Long Xu, Yi Lin Sun, Xian Li, Cheng Zhang, Rui Xuan Dai, Yuan Fan Zhao, Xin Ming Li, Xiao Li, Hong Wei Zhu

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

We report back gate field-effect transistors (FETs) with few-layered MoS₂ nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The MoS₂ transistors with PZT gating (MoS₂-PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors with high stability, which can be attributed to the polarization screening from interface adsorbates and charge dynamic trapping/detrapping into the interface defect states. The ON/OFF states ratios and memory windows have little change with the channel scaling from 2 μ m to 200 nm, revealing the channel scaling has not obvious influence on MoS₂-PZT FET properties, which suggests MoS₂-PZT FET a promising candidate for future non-volatile memory applications.

Original language	English
Article number	7116493
Pages (from-to)	784-786
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	8
DOIs	https://doi.org/10.1109/LED.2015.2440249
Publication status	Published - 1 Aug 2015
Externally published	Yes

Keywords

MoS2
PZT
field effect transistor
scaling down

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10.1109/LED.2015.2440249

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title = "MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating",

abstract = "We report back gate field-effect transistors (FETs) with few-layered MoS2 nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The MoS2 transistors with PZT gating (MoS2-PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors with high stability, which can be attributed to the polarization screening from interface adsorbates and charge dynamic trapping/detrapping into the interface defect states. The ON/OFF states ratios and memory windows have little change with the channel scaling from 2 μ m to 200 nm, revealing the channel scaling has not obvious influence on MoS2-PZT FET properties, which suggests MoS2-PZT FET a promising candidate for future non-volatile memory applications.",

keywords = "MoS2, PZT, field effect transistor, scaling down",

author = "Zhang, {Xiao Wen} and Dan Xie and Xu, {Jian Long} and Sun, {Yi Lin} and Xian Li and Cheng Zhang and Dai, {Rui Xuan} and Zhao, {Yuan Fan} and Li, {Xin Ming} and Xiao Li and Zhu, {Hong Wei}",

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year = "2015",

month = aug,

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doi = "10.1109/LED.2015.2440249",

language = "English",

volume = "36",

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T1 - MoS2 Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

AU - Zhang, Xiao Wen

AU - Xie, Dan

AU - Xu, Jian Long

AU - Sun, Yi Lin

AU - Li, Xian

AU - Zhang, Cheng

AU - Dai, Rui Xuan

AU - Zhao, Yuan Fan

AU - Li, Xin Ming

AU - Li, Xiao

AU - Zhu, Hong Wei

PY - 2015/8/1

Y1 - 2015/8/1

N2 - We report back gate field-effect transistors (FETs) with few-layered MoS2 nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The MoS2 transistors with PZT gating (MoS2-PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors with high stability, which can be attributed to the polarization screening from interface adsorbates and charge dynamic trapping/detrapping into the interface defect states. The ON/OFF states ratios and memory windows have little change with the channel scaling from 2 μ m to 200 nm, revealing the channel scaling has not obvious influence on MoS2-PZT FET properties, which suggests MoS2-PZT FET a promising candidate for future non-volatile memory applications.

AB - We report back gate field-effect transistors (FETs) with few-layered MoS2 nanosheet controlled by lead-zirconate-titanate (PZT) ferroelectric gating. The MoS2 transistors with PZT gating (MoS2-PZT FETs) exhibit reproducible hysteresis and nonvolatile memory behaviors with high stability, which can be attributed to the polarization screening from interface adsorbates and charge dynamic trapping/detrapping into the interface defect states. The ON/OFF states ratios and memory windows have little change with the channel scaling from 2 μ m to 200 nm, revealing the channel scaling has not obvious influence on MoS2-PZT FET properties, which suggests MoS2-PZT FET a promising candidate for future non-volatile memory applications.

KW - MoS2

KW - PZT

KW - field effect transistor

KW - scaling down

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JF - IEEE Electron Device Letters

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M1 - 7116493

ER -

MoS₂ Field-Effect Transistors with Lead Zirconate-Titanate Ferroelectric Gating

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Keywords

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