@inproceedings{1482b768e7f54f40ae1dbf6060a51353,
title = "Mask Bias optimization for NTD lithography process",
abstract = "NTD (Negative Tone Development) lithography process is widely used in the manufacture of the advanced technology. Because the NTD solution behavior is different from PTD (Positive Tone Development), the NTD photo resist has better litho-capability than PTD for certain kinds of lithography features such as trench and hole patterns. It is more difficult to both setup the NTD process and develop NTD photo resist than PTD process. To make lithography process and photoresist meeting the requirement for NTD process, Mask Bias for an anchor point is one of important factors.In this paper, we will report that by using different Mask Bias of anchor point, the NTD process with a certain photoresist can be optimized to meet the lithography process requirement and get better process performance.",
keywords = "Mask Bias), lithography, photo resist",
author = "Liwan Yue and Yanqiu Li and Zhibiao Mao and Qiang Wu and Yanli Li",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 6th International Workshop on Advanced Patterning Solutions, IWAPS 2022 ; Conference date: 21-10-2022 Through 22-10-2022",
year = "2022",
doi = "10.1109/IWAPS57146.2022.9972256",
language = "English",
series = "IWAPS 2022 - 2022 6th International Workshop on Advanced Patterning Solutions",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
editor = "Yayi Wei and Tianchun Ye",
booktitle = "IWAPS 2022 - 2022 6th International Workshop on Advanced Patterning Solutions",
address = "United States",
}