Magnetotransport properties of high equivalent Al composition AlGaN/GaN heterostructures using AlN/GaN superlattice as a barrier

Magnetotransport properties of the two-dimensional electron gas (2DEG) in high equivalent Al composition AlGaN/GaN heterostructures using AlN/GaN superlattice as a barrier have been studied at low temperatures and high magnetic fields. Well resolved Shubnikov-de Haas oscillations were observed, indicating excellent quality of the quasi-AlGaN/GaN heterostructures. It is measured that the energy separation between the two subbands in the GaN triangular quantum well can be as large as 180.5 meV, depicting strong quantum confinement at the heterointerface. The strong quantum confinement results in a high 2DEG density of 2 × 10¹³ cm^-2. The persistent photoconductivity investigation also indicates that the superlattice barrier layer has a low density of impurities/defects. It is believed that the AlN/GaN superlattice, instead of high Al composition alloy AlGaN layer, could greatly improve the device performance.