Magnetoresistance in graphene under quantum limit regime

Yang Bo Zhou; Han Chun Wu; Da Peng Yu; Zhi Min Liao

doi:10.1063/1.4795149

Magnetoresistance in graphene under quantum limit regime

Yang Bo Zhou, Han Chun Wu, Da Peng Yu, Zhi Min Liao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under the extreme quantum limit that is identified by Shubnikov-de Haas oscillations and quantum Hall effect. Our experimental results give a clear manifestation of the quantum linear MR.

Original language	English
Article number	093116
Journal	Applied Physics Letters
Volume	102
Issue number	9
DOIs	https://doi.org/10.1063/1.4795149
Publication status	Published - 4 Mar 2013
Externally published	Yes

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title = "Magnetoresistance in graphene under quantum limit regime",

abstract = "We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under the extreme quantum limit that is identified by Shubnikov-de Haas oscillations and quantum Hall effect. Our experimental results give a clear manifestation of the quantum linear MR.",

author = "Zhou, {Yang Bo} and Wu, {Han Chun} and Yu, {Da Peng} and Liao, {Zhi Min}",

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AU - Zhou, Yang Bo

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AU - Yu, Da Peng

AU - Liao, Zhi Min

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N2 - We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under the extreme quantum limit that is identified by Shubnikov-de Haas oscillations and quantum Hall effect. Our experimental results give a clear manifestation of the quantum linear MR.

AB - We report the magnetoresistance (MR) in single-layer graphene field-effect transistors at different gate voltages. At low temperatures, the MR exhibits fluctuations at Dirac point, which is attributed to quantum interference effect. Apart from the Dirac point, the MR shows a linear behavior under the extreme quantum limit that is identified by Shubnikov-de Haas oscillations and quantum Hall effect. Our experimental results give a clear manifestation of the quantum linear MR.

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JO - Applied Physics Letters

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Magnetoresistance in graphene under quantum limit regime

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