Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure

Wei Wang; Wen Zheng Zhou; Shang Jiang Wei; Xiao Juan Li; Zhi Gang Chang; Tie Lin; Li Yan Shang; Kui Han; Jun Xi Duan; Ning Tang; Bo Shen; Jun Hao Chu

Magneto-resistance for two-dimensional electron gas in GaN/Al_xGa_1-xN heterostructure

Wei Wang, Wen Zheng Zhou^*, Shang Jiang Wei, Xiao Juan Li, Zhi Gang Chang, Tie Lin, Li Yan Shang, Kui Han, Jun Xi Duan, Ning Tang, Bo Shen, Jun Hao Chu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The magnetotransport measurement is performed on a GaN/Al_xGa_1-xN heterostructure sample in a low temperature range of 1.4-25 K and at magnetic fields ranging from 0 T up to 13 T. Magnetoresistance of a two-dimensional electron gas confined in the heterostructure is investigated. The negative magnetoresistivity in the whole magnetic field range originates from the electron-electron interactions (EEIs), while the positive magnetoresistivity in the high field range results from the parallel conductance. The EEI correction terms, as well as the concentration and mobility of the parallel channel are obtained by fitting the experimental data. Furthermore, another method of calculation is used to check their accuracy.

Original language	English
Article number	237302
Journal	Wuli Xuebao/Acta Physica Sinica
Volume	61
Issue number	23
Publication status	Published - 5 Dec 2012
Externally published	Yes

Keywords

Electron-electron interaction
Magnetoresistance
Parallel conductance
Two-dimensional electron gas

Cite this

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title = "Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure",

abstract = "The magnetotransport measurement is performed on a GaN/AlxGa1-xN heterostructure sample in a low temperature range of 1.4-25 K and at magnetic fields ranging from 0 T up to 13 T. Magnetoresistance of a two-dimensional electron gas confined in the heterostructure is investigated. The negative magnetoresistivity in the whole magnetic field range originates from the electron-electron interactions (EEIs), while the positive magnetoresistivity in the high field range results from the parallel conductance. The EEI correction terms, as well as the concentration and mobility of the parallel channel are obtained by fitting the experimental data. Furthermore, another method of calculation is used to check their accuracy.",

keywords = "Electron-electron interaction, Magnetoresistance, Parallel conductance, Two-dimensional electron gas",

author = "Wei Wang and Zhou, {Wen Zheng} and Wei, {Shang Jiang} and Li, {Xiao Juan} and Chang, {Zhi Gang} and Tie Lin and Shang, {Li Yan} and Kui Han and Duan, {Jun Xi} and Ning Tang and Bo Shen and Chu, {Jun Hao}",

year = "2012",

month = dec,

day = "5",

language = "English",

volume = "61",

journal = "Wuli Xuebao/Acta Physica Sinica",

issn = "1000-3290",

publisher = "Science Press",

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TY - JOUR

T1 - Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure

AU - Wang, Wei

AU - Zhou, Wen Zheng

AU - Wei, Shang Jiang

AU - Li, Xiao Juan

AU - Chang, Zhi Gang

AU - Lin, Tie

AU - Shang, Li Yan

AU - Han, Kui

AU - Duan, Jun Xi

AU - Tang, Ning

AU - Shen, Bo

AU - Chu, Jun Hao

PY - 2012/12/5

Y1 - 2012/12/5

N2 - The magnetotransport measurement is performed on a GaN/AlxGa1-xN heterostructure sample in a low temperature range of 1.4-25 K and at magnetic fields ranging from 0 T up to 13 T. Magnetoresistance of a two-dimensional electron gas confined in the heterostructure is investigated. The negative magnetoresistivity in the whole magnetic field range originates from the electron-electron interactions (EEIs), while the positive magnetoresistivity in the high field range results from the parallel conductance. The EEI correction terms, as well as the concentration and mobility of the parallel channel are obtained by fitting the experimental data. Furthermore, another method of calculation is used to check their accuracy.

AB - The magnetotransport measurement is performed on a GaN/AlxGa1-xN heterostructure sample in a low temperature range of 1.4-25 K and at magnetic fields ranging from 0 T up to 13 T. Magnetoresistance of a two-dimensional electron gas confined in the heterostructure is investigated. The negative magnetoresistivity in the whole magnetic field range originates from the electron-electron interactions (EEIs), while the positive magnetoresistivity in the high field range results from the parallel conductance. The EEI correction terms, as well as the concentration and mobility of the parallel channel are obtained by fitting the experimental data. Furthermore, another method of calculation is used to check their accuracy.

KW - Electron-electron interaction

KW - Magnetoresistance

KW - Parallel conductance

KW - Two-dimensional electron gas

UR - http://www.scopus.com/inward/record.url?scp=84871570343&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84871570343

SN - 1000-3290

VL - 61

JO - Wuli Xuebao/Acta Physica Sinica

JF - Wuli Xuebao/Acta Physica Sinica

IS - 23

M1 - 237302

ER -

Magneto-resistance for two-dimensional electron gas in GaN/Al_xGa_1-xN heterostructure

Abstract

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