Magnetism near half-filling of a Van Hove singularity in twisted graphene bilayer

Yi Wen Liu, Jia Bin Qiao, Chao Yan, Yu Zhang, Si Yu Li, Lin He*

*Corresponding author for this work

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Abstract

Twisted graphene bilayers (TGBs) with slight twist angle always have low-energy Van Hove singularities (VHSs) that are strongly localized around AA-stacked regions of the moiré pattern. The localized VHSs are strongly related to novel correlated quantum states, such as Mott-like insulating phase and unconventional superconductivity, observed in the slightly TGBs. Here we studied the electronic properties of a TGB with θ∼1.64 and demonstrated that a VHS splits into two spin-polarized states flanking the Fermi energy when the VHS is close to the Fermi level. Such a result indicates that localized magnetic moments emerge in the AA-stacked regions of the TGB. Since the low-energy VHSs can be reached in slightly TGBs, our result therefore provides a facile direction to realize novel quantum phases in graphene system.

Original languageEnglish
Article number201408
JournalPhysical Review B
Volume99
Issue number20
DOIs
Publication statusPublished - 9 May 2019
Externally publishedYes

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Liu, Y. W., Qiao, J. B., Yan, C., Zhang, Y., Li, S. Y., & He, L. (2019). Magnetism near half-filling of a Van Hove singularity in twisted graphene bilayer. Physical Review B, 99(20), Article 201408. https://doi.org/10.1103/PhysRevB.99.201408