Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Xue Zhao; Haifei Ma; Hongxing Cai; Zhipeng Wei; Ying Bi; Xin Tang; Tianling Qin

doi:10.3390/ma16175790

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Xue Zhao, Haifei Ma, Hongxing Cai, Zhipeng Wei, Ying Bi, Xin Tang, Tianling Qin^*

^*Corresponding author for this work

School of Optics and Photonics

Research output: Contribution to journal › Review article › peer-review

4 Citations (Scopus)

Abstract

Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.

Original language	English
Article number	5790
Journal	Materials
Volume	16
Issue number	17
DOIs	https://doi.org/10.3390/ma16175790
Publication status	Published - Sept 2023

Keywords

colloidal quantum dots
infrared photodetector
lead chalcogenide
mercury chalcogenide

Access to Document

10.3390/ma16175790

Cite this

@article{debfe29a70ce401a930fc287bd89dd4f,

title = "Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors",

abstract = "Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.",

keywords = "colloidal quantum dots, infrared photodetector, lead chalcogenide, mercury chalcogenide",

author = "Xue Zhao and Haifei Ma and Hongxing Cai and Zhipeng Wei and Ying Bi and Xin Tang and Tianling Qin",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = sep,

doi = "10.3390/ma16175790",

language = "English",

volume = "16",

journal = "Materials",

issn = "1996-1944",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "17",

}

TY - JOUR

T1 - Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

AU - Zhao, Xue

AU - Ma, Haifei

AU - Cai, Hongxing

AU - Wei, Zhipeng

AU - Bi, Ying

AU - Tang, Xin

AU - Qin, Tianling

PY - 2023/9

Y1 - 2023/9

N2 - Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.

AB - Infrared detection technology plays an important role in remote sensing, imaging, monitoring, and other fields. So far, most infrared photodetectors are based on InGaAs and HgCdTe materials, which are limited by high fabrication costs, complex production processes, and poor compatibility with silicon-based readout integrated circuits. This hinders the wider application of infrared detection technology. Therefore, reducing the cost of high-performance photodetectors is a research focus. Colloidal quantum dot photodetectors have the advantages of solution processing, low cost, and good compatibility with silicon-based substrates. In this paper, we summarize the recent development of infrared photodetectors based on mainstream lead chalcogenide colloidal quantum dots.

KW - colloidal quantum dots

KW - infrared photodetector

KW - lead chalcogenide

KW - mercury chalcogenide

UR - http://www.scopus.com/inward/record.url?scp=85170359148&partnerID=8YFLogxK

U2 - 10.3390/ma16175790

DO - 10.3390/ma16175790

M3 - Review article

AN - SCOPUS:85170359148

SN - 1996-1944

VL - 16

JO - Materials

JF - Materials

IS - 17

M1 - 5790

ER -

Lead Chalcogenide Colloidal Quantum Dots for Infrared Photodetectors

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this