Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene

Han Chun Wu*, Alexander N. Chaika, Ming Chien Hsu, Tsung Wei Huang, Mourad Abid, Mohamed Abid, Victor Yu Aristov, Olga V. Molodtsova, Sergey V. Babenkov, Yuran Niu, Barry E. Murphy, Sergey A. Krasnikov, Olaf Lübben, Huajun Liu, Byong Sun Chun, Yahya T. Janabi, Sergei N. Molotkov, Igor V. Shvets, Alexander I. Lichtenstein, Mikhail I. KatsnelsonChing Ray Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

Graphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.

Original languageEnglish
Article number14453
JournalNature Communications
Volume8
DOIs
Publication statusPublished - 15 Feb 2017

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