Abstract
Two-dimensional layered materials such as graphene and transition metal dichalcogenides are promising candidates for developing high-density low-power next-generation memory. This Perspective reviews two major intrinsic memristive mechanisms in two-dimensional layered materials: polarization switching and resistive switching, which have high potentials for ferroelectric random access memory and in-memory computing, respectively. The potentials and challenges of these mechanisms for high-performance memory are also discussed with a futuristic insight.
| Original language | English |
|---|---|
| Article number | 050902 |
| Journal | Journal of Applied Physics |
| Volume | 129 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 7 Feb 2021 |
| Externally published | Yes |
Fingerprint
Dive into the research topics of 'Intrinsic memristive mechanisms in 2D layered materials for high-performance memory'. Together they form a unique fingerprint.Cite this
Li, H., Tao, L., & Xu, J. B. (2021). Intrinsic memristive mechanisms in 2D layered materials for high-performance memory. Journal of Applied Physics, 129(5), Article 050902. https://doi.org/10.1063/5.0035764