Job title: Professor; National high-level Young talents
Contact number:
Department: Optical Physics
E-mail: litao@bit.edu.cn
Address: Building, Liangxiang South Campus, Beijing Institute of Technology

His research interests include optoelectronic properties of low-dimensional quantum functional materials and applications of high-performance optoelectronic devices. The specific research contents include the following aspects:
(1) photoelectronic devices based on two-dimensional materials, including infrared detectors, silicon-based integrated devices, integrated intelligent vision devices, etc.;
(2) interaction characteristics of light and matter in two-dimensional materials and sensor components based on this;
(3) Controllable preparation and interface characteristics of large-area two-dimensional materials and their heterogeneous structures

2014.08-2018.08, PhD, Department of Electronic Engineering, The Chinese University of Hong Kong
2011.09-2014.07, National NanoScience Center, Master
2007.09 -- 2011.06, Department of Applied Physics, Hunan University, B.S.

2023-present, Associate Professor, School of Physics, Beijing Institute of Technology
2021-2022, School of Physics, Beijing Institute of Technology, Special Researcher
2018-2021, Postdoctoral Fellow, Department of Electronic Engineering, The Chinese University of Hong Kong, Co-supervisor: Professor Jian-Bin Xu

1.Tao, L.*; Zhou, Y.; Xu, J.-B.* Phase-Controlled Epitaxial Growth of MoTe2: Approaching High-Quality 2D Materials for Electronic Devices with Low Contact Resistance. J. Appl. Phys. 2022, 131, 110902.
2.Tao, L.; Chen, K.*; Chen, Z.; Cong, C.; Qiu, C.; Chen, J.; Wang, X.; Chen, H.; Yu, T.; Xie, W.; Deng, S.; Xu, J.-B.* 1T’ Transition Metal Telluride Atomic Layers for Plasmon-Free SERS at Femtomolar Levels. J. Am. Chem. Soc. 2018, 140, 8696.
3. Zhou, Y.; Tong, L.; Chen, Z.; Tao, L.; Pang, Y.; Xu, J.-B*. Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents. Nat. Commun. 2023, 14, 4270.
4. Zhou, Y.; Tong, L.; Chen, Z.; Tao, L.; Li, H.; Pang, Y.; Xu, J.-B*. Vertical Nonvolatile Schottky-Barrier-Field-Effect Transistor with Self-Gating Semimetal Contact. Adv. Funct. Mater. 2023, 33, 2213254.
5.Tao, L.*; Li. Z.; Chen, K.*; Zhou, Y.; Li, H.; Wang, X.; Zhan, R.; Hou, X.; Zhao, Y.; Xu, J.; Qiu, T.; Wan, X.; Xu, J.-B.* A Spontaneously Formed Plasmonic-MoTe2 Hybrid Platform for Ultrasensitive Raman Enhancement. Cell Rep. Phys. Sci. 2021, 2, 100526.
6.Zhou, Y.; Tao, L.*; Chen, Z.; Lai, H.; Xie, W.; Xu, J.-B.* Defect Etching of Phase-Transition-Assisted CVD-Grown 2H-MoTe2. Small 2021, 17, 2102146.
7.Tao, L.; Chen, Z.*; Li, Z.; Wang, J.; Xu, X.; Xu, J.-B.* Enhancing light-matter interaction in 2D materials by optical micro/nano architectures for high-performance optoelectronic devices. InfoMat 2021, 3, 36.
8.Lyu, J.; Zhang, X.; Cai, L.; Tao, L.*; Ma, W.; Li, A.; Tian, Y.; Yin, Y.; Kong, D.; Yi, W.; Wang, X.; Liu, R.* Low-Threshold and Narrow-Emission Random Lasing in a Self-Assembly TiN Nanoparticle-Doped Carbon Quantum Dot/DCM Nanowire Composite. Photon. Res. 2022, 10, 2239.
9.Chen, Z.; Chen, X.; Tao, L. (co-first); Chen, K.; Zhang, R.; Long, M.; Pickwell-MacPherson, E.*; Xu, J.* Broadband Graphene-Based Electro-Optic Chiral Polarization Conversion for Terahertz Pulse Shaping. ACS Photon. 2022, 9, 3633. (Cover)
10.Li, H.; Tao, L.*; Xu, J.-B.* Intrinsic Memristive Mechanisms in 2D Layered Materials for High-Performance Memory. J. Appl. Phys. 2021, 129, 050902.
11.Xu, X.; Chen, Z.; Sun, B.; Zhao, Y.; Tao, L.*; Xu, J.-B.* Efficient Passivation of Monolayer MoS2 by Epitaxially Grown 2D Organic Crystals. Sci. Bull. 2019, 64, 1700.
12.Tao, L.; Li, H.; Sun, M.; Xie, D.; Li, X.; Xu, J.-B.* Enhanced Photoresponse in Interfacial Gated Graphene Phototransistor with Ultrathin Al2O3 Dielectric. IEEE Electron Device Lett. 2018, 39, 987. (Cover)
13.Tao, L.; Li, H.; Gao, Y.; Chen, Z.; Wang, L.*; Deng, Y.; Zhang, J.; Xu, J.-B.* Deterministic and Etching-Free Transfer of Large-Scale 2D Layered Materials for Constructing Interlayer Coupled van der Waals Heterostructures. Adv. Mater. Technol. 2018, 3, 1700282.
14.Tao, L.; Chen, Z.; Li, X.*; Yan, K.; Xu, J.-B.* Hybrid Graphene Tunneling Photoconductor with Interface Engineering towards Fast Photoresponse and High Responsivity. npj 2D Mater. Appl. 2017, 1, 19.
15.Tao, L.; Chen, K.; Chen, Z.; Chen, W.; Gui, X.; Chen, H.; Li, X.; Xu, J.-B.* Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS2 Film with Spatial Homogeneity and the Visualization of Grain Boundaries. ACS Appl. Mater. Interfaces 2017, 9, 12073.
16.Li, X.*; Tao, L. (co-first); Chen, Z.; Fang, H.; Li, X.; Wang, X.; Xu, J.-B.*; Zhu, H.* Graphene and Related Two-Dimensional Materials: Structure-Property Relationships for Electronics and Optoelectronics. Appl. Phys. Rev. 2017, 4, 21306.
17.Tao, L.; Qiu, C.; Yu, F.; Yang, H.; Chen, M.; Wang, G.; Sun, L.* Modification on Single-Layer Graphene Induced by Low-Energy Electron-Beam Irradiation. J. Phys. Chem. C 2013, 117, 10079.
18.Tao, L.; Wang, G.; Yu, F.; Sun, L.* Different Effects of Substrates on the Morphologies of Single-Walled Carbon Nanotubes. Chin. Sci. Bull. (known as Sci. Bull. now) 2014, 59, 2318.
19.Zhang, Y.*; Tao, L. (co-first); Yi, D.; Xu, J.-B.; Tsang, H. K.* Enhanced four-wave mixing with MoS2 on a silicon waveguide. J. Opt. 2020, 22, 025503.
20.Zhang, Y.*; Tao, L. (co-first); Yi, D.; Xu, J.-B.; Tsang, H. K.* Enhanced thermo-optic nonlinearities in a MoS2-on-silicon microring resonator. Appl. Phys. Express 2020, 13, 022004.
21.Chen, Z.; Chen, X.; Tao, L.; Chen, K.; Long, M.; Liu, X.; Yan, K.; Stantchev, R. I.; Pickwell-MacPherson, E.*; Xu, J.-B.* Graphene Controlled Brewster Angle Device for Ultra Broadband Terahertz Modulation. Nat. Commun. 2018, 9, 4909.
22.Gao, Y.*; Tao, L.; Tsang, H. K.; Shu, C. Graphene-on-Silicon Nitride Waveguide Photodetector with Interdigital Contacts. Appl. Phys. Lett. 2018, 112, 211107.
23.Chen, Z.; Li, X.*; Wang, J.; Tao, L.; Long, M.; Liang, S.-J.; Ang, L. K.; Shu, C.; Tsang, H. K.; Xu, J.-B.* Synergistic Effects of Plasmonics and Electron Trapping in Graphene Short-Wave Infrared Photodetectors with Ultrahigh Responsivity. ACS Nano 2017, 11, 430.