Infrared photodetector based on GeTe nanofilms with high performance

Yiqun Zhao; Libin Tang; Shengyi Yang; Kar Seng Teng; Shu Ping Lau

doi:10.1364/OL.385280

Infrared photodetector based on GeTe nanofilms with high performance

Yiqun Zhao, Libin Tang^*, Shengyi Yang, Kar Seng Teng, Shu Ping Lau

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing.High-performance photodetectors with detectivity of∼10¹³ Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.

Original language	English
Pages (from-to)	1108-1111
Number of pages	4
Journal	Optics Letters
Volume	45
Issue number	5
DOIs	https://doi.org/10.1364/OL.385280
Publication status	Published - 1 Mar 2020

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title = "Infrared photodetector based on GeTe nanofilms with high performance",

abstract = "GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing.High-performance photodetectors with detectivity of∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.",

author = "Yiqun Zhao and Libin Tang and Shengyi Yang and Teng, {Kar Seng} and Lau, {Shu Ping}",

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AU - Zhao, Yiqun

AU - Tang, Libin

AU - Yang, Shengyi

AU - Teng, Kar Seng

AU - Lau, Shu Ping

PY - 2020/3/1

Y1 - 2020/3/1

N2 - GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing.High-performance photodetectors with detectivity of∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.

AB - GeTe is an important narrow band gap semiconductor material, which has found application in the fields of thermoelectricity, phase change storage as well as switch. However, it has not been studied for application in the field of photodetectors. Here, GeTe thin films were grown by magnetron sputtering and their material structure, optical and electrical properties were compared before and after annealing.High-performance photodetectors with detectivity of∼1013 Jones at 850 nm light were demonstrated. Thus the novel, to the best of our knowledge, application of GeTe in optoelectronic devices is reported in this work.

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JO - Optics Letters

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ER -

Infrared photodetector based on GeTe nanofilms with high performance

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