TY - JOUR
T1 - Influence of heterojunction interface on exciplex emission from organic light-emitting diodes under electric fields
AU - Yang, Shengyi
AU - Zhang, Xiulong
AU - Lou, Zhidong
AU - Hou, Yanbing
PY - 2008/3
Y1 - 2008/3
N2 - In this paper, electroluminescence from organic light-emitting diodes based on 2-(4′-biphenyl)-5-(4″-tert-butylphenyl)-1,3,4-oxadiazole (PBD) and N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4, 4′-diamine (TPD) is reported. Based on the exciplex emission from the TPD/PBD interface under high electric fields, the influence of the TPD/PBD interface on exciplex emission was investigated by increasing the number of TPD/PBD interfaces while keeping both the total thickness of the TPD layer and the PBD layer constant in the multiple quantum-wells (MQW) device ITO/TPD/[PBD/TPD]n/PBD/Al (n is the well number that was varied from 0 to 3). Our experimental data shows that exciplex emission can be enhanced by suitably increasing the well number of this kind of MQW-like device.
AB - In this paper, electroluminescence from organic light-emitting diodes based on 2-(4′-biphenyl)-5-(4″-tert-butylphenyl)-1,3,4-oxadiazole (PBD) and N,N′-diphenyl-N,N′-bis(3-methylphenyl)-(1,1′-biphenyl)-4, 4′-diamine (TPD) is reported. Based on the exciplex emission from the TPD/PBD interface under high electric fields, the influence of the TPD/PBD interface on exciplex emission was investigated by increasing the number of TPD/PBD interfaces while keeping both the total thickness of the TPD layer and the PBD layer constant in the multiple quantum-wells (MQW) device ITO/TPD/[PBD/TPD]n/PBD/Al (n is the well number that was varied from 0 to 3). Our experimental data shows that exciplex emission can be enhanced by suitably increasing the well number of this kind of MQW-like device.
UR - http://www.scopus.com/inward/record.url?scp=37549013669&partnerID=8YFLogxK
U2 - 10.1007/s00339-007-4306-0
DO - 10.1007/s00339-007-4306-0
M3 - Article
AN - SCOPUS:37549013669
SN - 0947-8396
VL - 90
SP - 475
EP - 478
JO - Applied Physics A: Materials Science and Processing
JF - Applied Physics A: Materials Science and Processing
IS - 3
ER -