Influence of flare and NA error on lithography

Xuxia Wang; Lihui Liu; Yanqiu Li; Xuejia Guo; Chunying Han; Jianhong Yang

doi:10.1117/12.978626

Influence of flare and NA error on lithography

Xuxia Wang, Lihui Liu^*, Yanqiu Li, Xuejia Guo, Chunying Han, Jianhong Yang

^*Corresponding author for this work

School of Optics and Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

More and more factors influence the lithography performance with the shrinkage of Critical Dimension (CD). CD error raised by litho tools imperfection cannot be ignored any more. Flare control and Numerical Aperture (NA) adjustment play a critical role in 90nm node dry lithography. In this paper, the respective and the joint impact of flare and NA error for 90nm dense line, semi-dense line and isolated line have been studied by simulation. The results show that the change of CD error is approximately linear with flare and NA error respectively. CD error and Depth of Focus (DOF) error for dense line are sensitive to the change of flare and NA error, especially the sensitivity of CD error to flare and NA error of dense line is larger than that of semi-dense line and isolated line. The placement error caused by flare and NA error is less than 10^-3 nm for these patterns. The joint impact of flare and NA error on lithography performance is not the linear sum of the results that two factors change respectively; there is a certain coupling effect between these two factors. For these patterns, the sensitivity of CD error to flare is larger than that to NA error, but a larger NA error can compensate the effect caused by flare. Therefore, the tolerance of flare can be relaxed by adjusting NA.

Original language	English
Title of host publication	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies
Subtitle of host publication	Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems
DOIs	https://doi.org/10.1117/12.978626
Publication status	Published - 2012
Event	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems - Xiamen, China Duration: 26 Apr 2012 → 29 Apr 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8418
ISSN (Print)	0277-786X

Conference

Conference	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems
Country/Territory	China
City	Xiamen
Period	26/04/12 → 29/04/12

Keywords

Flare
Lithography performance
NA error
PROLITH

Access to Document

10.1117/12.978626

Cite this

Wang, X., Liu, L., Li, Y., Guo, X., Han, C., & Yang, J. (2012). Influence of flare and NA error on lithography. In 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems Article 84180C (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8418). https://doi.org/10.1117/12.978626

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title = "Influence of flare and NA error on lithography",

abstract = "More and more factors influence the lithography performance with the shrinkage of Critical Dimension (CD). CD error raised by litho tools imperfection cannot be ignored any more. Flare control and Numerical Aperture (NA) adjustment play a critical role in 90nm node dry lithography. In this paper, the respective and the joint impact of flare and NA error for 90nm dense line, semi-dense line and isolated line have been studied by simulation. The results show that the change of CD error is approximately linear with flare and NA error respectively. CD error and Depth of Focus (DOF) error for dense line are sensitive to the change of flare and NA error, especially the sensitivity of CD error to flare and NA error of dense line is larger than that of semi-dense line and isolated line. The placement error caused by flare and NA error is less than 10-3 nm for these patterns. The joint impact of flare and NA error on lithography performance is not the linear sum of the results that two factors change respectively; there is a certain coupling effect between these two factors. For these patterns, the sensitivity of CD error to flare is larger than that to NA error, but a larger NA error can compensate the effect caused by flare. Therefore, the tolerance of flare can be relaxed by adjusting NA.",

keywords = "Flare, Lithography performance, NA error, PROLITH",

author = "Xuxia Wang and Lihui Liu and Yanqiu Li and Xuejia Guo and Chunying Han and Jianhong Yang",

year = "2012",

doi = "10.1117/12.978626",

language = "English",

isbn = "9780819491008",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies",

note = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems ; Conference date: 26-04-2012 Through 29-04-2012",

}

Wang, X, Liu, L , Li, Y, Guo, X, Han, C & Yang, J 2012, Influence of flare and NA error on lithography. in 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems., 84180C, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8418, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems, Xiamen, China, 26/04/12. https://doi.org/10.1117/12.978626

Influence of flare and NA error on lithography. / Wang, Xuxia; Liu, Lihui ; Li, Yanqiu et al.
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems. 2012. 84180C (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8418).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Influence of flare and NA error on lithography

AU - Wang, Xuxia

AU - Liu, Lihui

AU - Li, Yanqiu

AU - Guo, Xuejia

AU - Han, Chunying

AU - Yang, Jianhong

PY - 2012

Y1 - 2012

N2 - More and more factors influence the lithography performance with the shrinkage of Critical Dimension (CD). CD error raised by litho tools imperfection cannot be ignored any more. Flare control and Numerical Aperture (NA) adjustment play a critical role in 90nm node dry lithography. In this paper, the respective and the joint impact of flare and NA error for 90nm dense line, semi-dense line and isolated line have been studied by simulation. The results show that the change of CD error is approximately linear with flare and NA error respectively. CD error and Depth of Focus (DOF) error for dense line are sensitive to the change of flare and NA error, especially the sensitivity of CD error to flare and NA error of dense line is larger than that of semi-dense line and isolated line. The placement error caused by flare and NA error is less than 10-3 nm for these patterns. The joint impact of flare and NA error on lithography performance is not the linear sum of the results that two factors change respectively; there is a certain coupling effect between these two factors. For these patterns, the sensitivity of CD error to flare is larger than that to NA error, but a larger NA error can compensate the effect caused by flare. Therefore, the tolerance of flare can be relaxed by adjusting NA.

AB - More and more factors influence the lithography performance with the shrinkage of Critical Dimension (CD). CD error raised by litho tools imperfection cannot be ignored any more. Flare control and Numerical Aperture (NA) adjustment play a critical role in 90nm node dry lithography. In this paper, the respective and the joint impact of flare and NA error for 90nm dense line, semi-dense line and isolated line have been studied by simulation. The results show that the change of CD error is approximately linear with flare and NA error respectively. CD error and Depth of Focus (DOF) error for dense line are sensitive to the change of flare and NA error, especially the sensitivity of CD error to flare and NA error of dense line is larger than that of semi-dense line and isolated line. The placement error caused by flare and NA error is less than 10-3 nm for these patterns. The joint impact of flare and NA error on lithography performance is not the linear sum of the results that two factors change respectively; there is a certain coupling effect between these two factors. For these patterns, the sensitivity of CD error to flare is larger than that to NA error, but a larger NA error can compensate the effect caused by flare. Therefore, the tolerance of flare can be relaxed by adjusting NA.

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KW - Lithography performance

KW - NA error

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M3 - Conference contribution

AN - SCOPUS:84875623635

SN - 9780819491008

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies

T2 - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems

Y2 - 26 April 2012 through 29 April 2012

ER -

Wang X, Liu L , Li Y, Guo X, Han C, Yang J. Influence of flare and NA error on lithography. In 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems. 2012. 84180C. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.978626

Influence of flare and NA error on lithography

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Keywords

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