Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films

R. G.S. Sofin; Han Chun Wu; R. Ramos; S. K. Arora; I. V. Shvets

doi:10.1063/1.4935157

Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe₃O₄ (110) films

R. G.S. Sofin^*, Han Chun Wu, R. Ramos, S. K. Arora, I. V. Shvets

^*Corresponding author for this work

School of Physics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We studied Fe₃O₄ (110) films grown epitaxially on MgO (110) substrates using oxygen plasma assisted molecular beam epitaxy. The films with thickness of 30-200 nm showed anisotropic in-plane partial strain relaxation. Magneto resistance (MR) measurements with current and magnetic field along 〈001〉 direction showed higher MR compared to 〈1¯10〉 direction. Maximum value of MR was measured at Verwey transition temperature for both directions. We explain the observed anisotropy in the MR on the basis of the effects of anisotropic misfit strain, and the difference between the density of antiferromagnetically coupled antiphase boundaries formed along 〈001〉 and 〈1¯10〉 crystallographic directions, suggesting the dependence of spin polarisation on the anisotropic strain relaxation along the said crystallographic directions.

Original language	English
Article number	173903
Journal	Journal of Applied Physics
Volume	118
Issue number	17
DOIs	https://doi.org/10.1063/1.4935157
Publication status	Published - 7 Nov 2015

Access to Document

10.1063/1.4935157

Cite this

@article{2404992341da48068f050b257cffd0ff,

title = "Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films",

abstract = "We studied Fe3O4 (110) films grown epitaxially on MgO (110) substrates using oxygen plasma assisted molecular beam epitaxy. The films with thickness of 30-200 nm showed anisotropic in-plane partial strain relaxation. Magneto resistance (MR) measurements with current and magnetic field along 〈001〉 direction showed higher MR compared to 〈1¯10〉 direction. Maximum value of MR was measured at Verwey transition temperature for both directions. We explain the observed anisotropy in the MR on the basis of the effects of anisotropic misfit strain, and the difference between the density of antiferromagnetically coupled antiphase boundaries formed along 〈001〉 and 〈1¯10〉 crystallographic directions, suggesting the dependence of spin polarisation on the anisotropic strain relaxation along the said crystallographic directions.",

author = "Sofin, {R. G.S.} and Wu, {Han Chun} and R. Ramos and Arora, {S. K.} and Shvets, {I. V.}",

note = "Publisher Copyright: {\textcopyright} 2015 AIP Publishing LLC.",

year = "2015",

month = nov,

day = "7",

doi = "10.1063/1.4935157",

language = "English",

volume = "118",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "17",

}

TY - JOUR

T1 - Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe3O4 (110) films

AU - Sofin, R. G.S.

AU - Wu, Han Chun

AU - Ramos, R.

AU - Arora, S. K.

AU - Shvets, I. V.

PY - 2015/11/7

Y1 - 2015/11/7

N2 - We studied Fe3O4 (110) films grown epitaxially on MgO (110) substrates using oxygen plasma assisted molecular beam epitaxy. The films with thickness of 30-200 nm showed anisotropic in-plane partial strain relaxation. Magneto resistance (MR) measurements with current and magnetic field along 〈001〉 direction showed higher MR compared to 〈1¯10〉 direction. Maximum value of MR was measured at Verwey transition temperature for both directions. We explain the observed anisotropy in the MR on the basis of the effects of anisotropic misfit strain, and the difference between the density of antiferromagnetically coupled antiphase boundaries formed along 〈001〉 and 〈1¯10〉 crystallographic directions, suggesting the dependence of spin polarisation on the anisotropic strain relaxation along the said crystallographic directions.

AB - We studied Fe3O4 (110) films grown epitaxially on MgO (110) substrates using oxygen plasma assisted molecular beam epitaxy. The films with thickness of 30-200 nm showed anisotropic in-plane partial strain relaxation. Magneto resistance (MR) measurements with current and magnetic field along 〈001〉 direction showed higher MR compared to 〈1¯10〉 direction. Maximum value of MR was measured at Verwey transition temperature for both directions. We explain the observed anisotropy in the MR on the basis of the effects of anisotropic misfit strain, and the difference between the density of antiferromagnetically coupled antiphase boundaries formed along 〈001〉 and 〈1¯10〉 crystallographic directions, suggesting the dependence of spin polarisation on the anisotropic strain relaxation along the said crystallographic directions.

UR - http://www.scopus.com/inward/record.url?scp=84946761807&partnerID=8YFLogxK

U2 - 10.1063/1.4935157

DO - 10.1063/1.4935157

M3 - Article

AN - SCOPUS:84946761807

SN - 0021-8979

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 17

M1 - 173903

ER -

Influence of anisotropic strain relaxation on the magnetoresistance properties of epitaxial Fe₃O₄ (110) films

Abstract

Access to Document

Other files and links

Fingerprint

Cite this