TY - GEN
T1 - Impact of MSD and mask manufacture errors on 45nm-node lithography
AU - Han, Chunying
AU - Li, Yanqiu
AU - Liu, Lihui
AU - Guo, Xuejia
AU - Wang, Xuxia
AU - Yang, Jianhong
PY - 2012
Y1 - 2012
N2 - Critical Dimension Uniformity (CDU) is quite sensitive in 45nm node lithography and beyond, thus, more attentions should be paid on the controlling of CDU. Moving Standard Deviation (MSD) and Mask Manufacture Errors (MMEs) including the Mask Critical Dimension Error (MCDE), Mask Transmittance Error (MTE) and Mask Phase Error (MPE) are the two important factors influencing CDU. The study on the impact of MSD and MMEs is a helpful way to improve the lithographic quality. Previous researches often emphasize on the single impact of MSD or MMEs, however the impact of both of them usually exists simultaneously. The studies on the co-impact of MSD and MMEs are more significant. In this paper, the impact and the cross-talk between MSD and MMEs on Critical Dimension (CD) and Exposure Latitude verse Depth of Focus (EL-DOF) for different pattern under various illumination conditions have been evaluated by simulation, which is carried on PROLITH™ X3 and in-house software IntLitho. And then, the MSD's tolerance with the existence of MMEs is discussed. The simulation results show that CD error caused by the co-existence of MSD and MMEs is not the simple algebraic sum of the individual CD error caused by MSD or MMEs. The CD error becomes more pronounced when the MSD and MMEs interact with each other. The studies on the tolerance reveal that the tolerance of MSD decreases due to MMEs' existence and mainly depends on the mask pattern's pitch.
AB - Critical Dimension Uniformity (CDU) is quite sensitive in 45nm node lithography and beyond, thus, more attentions should be paid on the controlling of CDU. Moving Standard Deviation (MSD) and Mask Manufacture Errors (MMEs) including the Mask Critical Dimension Error (MCDE), Mask Transmittance Error (MTE) and Mask Phase Error (MPE) are the two important factors influencing CDU. The study on the impact of MSD and MMEs is a helpful way to improve the lithographic quality. Previous researches often emphasize on the single impact of MSD or MMEs, however the impact of both of them usually exists simultaneously. The studies on the co-impact of MSD and MMEs are more significant. In this paper, the impact and the cross-talk between MSD and MMEs on Critical Dimension (CD) and Exposure Latitude verse Depth of Focus (EL-DOF) for different pattern under various illumination conditions have been evaluated by simulation, which is carried on PROLITH™ X3 and in-house software IntLitho. And then, the MSD's tolerance with the existence of MMEs is discussed. The simulation results show that CD error caused by the co-existence of MSD and MMEs is not the simple algebraic sum of the individual CD error caused by MSD or MMEs. The CD error becomes more pronounced when the MSD and MMEs interact with each other. The studies on the tolerance reveal that the tolerance of MSD decreases due to MMEs' existence and mainly depends on the mask pattern's pitch.
KW - Lithography
KW - Mask Manufacture Errors
KW - Moving Standard Deviation
UR - http://www.scopus.com/inward/record.url?scp=84875579534&partnerID=8YFLogxK
U2 - 10.1117/12.978262
DO - 10.1117/12.978262
M3 - Conference contribution
AN - SCOPUS:84875579534
SN - 9780819491008
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies
T2 - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems
Y2 - 26 April 2012 through 29 April 2012
ER -