Hybrid graphene/cadmium-free ZnSe/ZnS quantum dots phototransistors for UV detection

Yi Lin Sun; Dan Xie; Meng Xing Sun; Chang Jiu Teng; Liu Qian; Ruo Song Chen; Lan Xiang; Tian Ling Ren

doi:10.1038/s41598-018-23507-y

Hybrid graphene/cadmium-free ZnSe/ZnS quantum dots phototransistors for UV detection

Yi Lin Sun, Dan Xie^*, Meng Xing Sun, Chang Jiu Teng, Liu Qian, Ruo Song Chen, Lan Xiang, Tian Ling Ren

^*Corresponding author for this work

Tsinghua University

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Graphene-based optoelectronic devices have attracted much attention due to their broadband photon responsivity and fast response time. However, the performance of such graphene-based photodetectors is greatly limited by weak light absorption and low responsivity induced by the gapless nature of graphene. Here, we achieved a high responsivity above 10³ AW^-1 for Ultraviolet (UV) light in a hybrid structure based phototransistor, which consists of CVD-grown monolayer graphene and ZnSe/ZnS core/shell quantum dots. The photodetectors exhibit a selective photo responsivity for the UV light with the wavelength of 405 nm, confirming the main light absorption from QDs. The photo-generated charges have been found to transfer from QDs to graphene channel, leading to a gate-tunable photo responsivity with the maximum value obtained at V _G about 15V. A recirculate 100 times behavior with a good stability of 21 days is demonstrated for our devices and another flexible graphene/QDs based photoconductors have been found to be functional after 1000 bending cycles. Such UV photodetectors based on graphene decorated with cadmium-free ZnSe/ZnS quantum dots offer a new way to build environmental friendly optoelectronics.

Original language	English
Article number	5107
Journal	Scientific Reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-018-23507-y
Publication status	Published - 1 Dec 2018
Externally published	Yes

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title = "Hybrid graphene/cadmium-free ZnSe/ZnS quantum dots phototransistors for UV detection",

abstract = "Graphene-based optoelectronic devices have attracted much attention due to their broadband photon responsivity and fast response time. However, the performance of such graphene-based photodetectors is greatly limited by weak light absorption and low responsivity induced by the gapless nature of graphene. Here, we achieved a high responsivity above 103 AW-1 for Ultraviolet (UV) light in a hybrid structure based phototransistor, which consists of CVD-grown monolayer graphene and ZnSe/ZnS core/shell quantum dots. The photodetectors exhibit a selective photo responsivity for the UV light with the wavelength of 405 nm, confirming the main light absorption from QDs. The photo-generated charges have been found to transfer from QDs to graphene channel, leading to a gate-tunable photo responsivity with the maximum value obtained at V G about 15V. A recirculate 100 times behavior with a good stability of 21 days is demonstrated for our devices and another flexible graphene/QDs based photoconductors have been found to be functional after 1000 bending cycles. Such UV photodetectors based on graphene decorated with cadmium-free ZnSe/ZnS quantum dots offer a new way to build environmental friendly optoelectronics.",

author = "Sun, {Yi Lin} and Dan Xie and Sun, {Meng Xing} and Teng, {Chang Jiu} and Liu Qian and Chen, {Ruo Song} and Lan Xiang and Ren, {Tian Ling}",

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AU - Sun, Yi Lin

AU - Xie, Dan

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AU - Teng, Chang Jiu

AU - Qian, Liu

AU - Chen, Ruo Song

AU - Xiang, Lan

AU - Ren, Tian Ling

PY - 2018/12/1

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N2 - Graphene-based optoelectronic devices have attracted much attention due to their broadband photon responsivity and fast response time. However, the performance of such graphene-based photodetectors is greatly limited by weak light absorption and low responsivity induced by the gapless nature of graphene. Here, we achieved a high responsivity above 103 AW-1 for Ultraviolet (UV) light in a hybrid structure based phototransistor, which consists of CVD-grown monolayer graphene and ZnSe/ZnS core/shell quantum dots. The photodetectors exhibit a selective photo responsivity for the UV light with the wavelength of 405 nm, confirming the main light absorption from QDs. The photo-generated charges have been found to transfer from QDs to graphene channel, leading to a gate-tunable photo responsivity with the maximum value obtained at V G about 15V. A recirculate 100 times behavior with a good stability of 21 days is demonstrated for our devices and another flexible graphene/QDs based photoconductors have been found to be functional after 1000 bending cycles. Such UV photodetectors based on graphene decorated with cadmium-free ZnSe/ZnS quantum dots offer a new way to build environmental friendly optoelectronics.

AB - Graphene-based optoelectronic devices have attracted much attention due to their broadband photon responsivity and fast response time. However, the performance of such graphene-based photodetectors is greatly limited by weak light absorption and low responsivity induced by the gapless nature of graphene. Here, we achieved a high responsivity above 103 AW-1 for Ultraviolet (UV) light in a hybrid structure based phototransistor, which consists of CVD-grown monolayer graphene and ZnSe/ZnS core/shell quantum dots. The photodetectors exhibit a selective photo responsivity for the UV light with the wavelength of 405 nm, confirming the main light absorption from QDs. The photo-generated charges have been found to transfer from QDs to graphene channel, leading to a gate-tunable photo responsivity with the maximum value obtained at V G about 15V. A recirculate 100 times behavior with a good stability of 21 days is demonstrated for our devices and another flexible graphene/QDs based photoconductors have been found to be functional after 1000 bending cycles. Such UV photodetectors based on graphene decorated with cadmium-free ZnSe/ZnS quantum dots offer a new way to build environmental friendly optoelectronics.

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Hybrid graphene/cadmium-free ZnSe/ZnS quantum dots phototransistors for UV detection

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