Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity

Mengxing Sun; Qiyi Fang; Dan Xie; Yilin Sun; Liu Qian; Jianlong Xu; Peng Xiao; Changjiu Teng; Weiwei Li; Tianling Ren; Yanfeng Zhang

doi:10.1007/s12274-017-1855-1

Heterostructured graphene quantum dot/WSe₂/Si photodetector with suppressed dark current and improved detectivity

Mengxing Sun, Qiyi Fang, Dan Xie^*, Yilin Sun, Liu Qian, Jianlong Xu, Peng Xiao, Changjiu Teng, Weiwei Li, Tianling Ren, Yanfeng Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe₂ obtained using physical vapor deposition. The high quality of the WSe₂/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 10⁷. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe₂/Si heterojunction exhibits a high responsivity of ∼ 707 mA·W^–1, short response time of 0.2 ms, and good specific detectivity of ∼ 4.51 × 10⁹ Jones. These properties suggest that the GQDs/WSe₂/Si heterojunction holds great potential for application in future high-performance photodetectors. [Figure not available: see fulltext.].

Original language	English
Pages (from-to)	3233-3243
Number of pages	11
Journal	Nano Research
Volume	11
Issue number	6
DOIs	https://doi.org/10.1007/s12274-017-1855-1
Publication status	Published - 1 Jun 2018
Externally published	Yes

Keywords

Si
WSe
graphene quantum dots
heterojunction
photodetector

Access to Document

10.1007/s12274-017-1855-1

Cite this

@article{b7c6930bb36c46d090f99c9474084165,

title = "Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity",

abstract = "A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of ∼ 707 mA·W–1, short response time of 0.2 ms, and good specific detectivity of ∼ 4.51 × 109 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high-performance photodetectors. [Figure not available: see fulltext.].",

keywords = "Si, WSe, graphene quantum dots, heterojunction, photodetector",

author = "Mengxing Sun and Qiyi Fang and Dan Xie and Yilin Sun and Liu Qian and Jianlong Xu and Peng Xiao and Changjiu Teng and Weiwei Li and Tianling Ren and Yanfeng Zhang",

note = "Publisher Copyright: {\textcopyright} 2017, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.",

year = "2018",

month = jun,

day = "1",

doi = "10.1007/s12274-017-1855-1",

language = "English",

volume = "11",

pages = "3233--3243",

journal = "Nano Research",

issn = "1998-0124",

publisher = "Tsinghua University Press",

number = "6",

}

TY - JOUR

T1 - Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity

AU - Sun, Mengxing

AU - Fang, Qiyi

AU - Xie, Dan

AU - Sun, Yilin

AU - Qian, Liu

AU - Xu, Jianlong

AU - Xiao, Peng

AU - Teng, Changjiu

AU - Li, Weiwei

AU - Ren, Tianling

AU - Zhang, Yanfeng

PY - 2018/6/1

Y1 - 2018/6/1

N2 - A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of ∼ 707 mA·W–1, short response time of 0.2 ms, and good specific detectivity of ∼ 4.51 × 109 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high-performance photodetectors. [Figure not available: see fulltext.].

AB - A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of ∼ 707 mA·W–1, short response time of 0.2 ms, and good specific detectivity of ∼ 4.51 × 109 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high-performance photodetectors. [Figure not available: see fulltext.].

KW - Si

KW - WSe

KW - graphene quantum dots

KW - heterojunction

KW - photodetector

UR - http://www.scopus.com/inward/record.url?scp=85031730567&partnerID=8YFLogxK

U2 - 10.1007/s12274-017-1855-1

DO - 10.1007/s12274-017-1855-1

M3 - Article

AN - SCOPUS:85031730567

SN - 1998-0124

VL - 11

SP - 3233

EP - 3243

JO - Nano Research

JF - Nano Research

IS - 6

ER -

Heterostructured graphene quantum dot/WSe₂/Si photodetector with suppressed dark current and improved detectivity

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this