From positive to negative magnetoresistance in graphene with increasing disorder

Yang Bo Zhou, Bing Hong Han, Zhi Min Liao*, Han Chun Wu, Da Peng Yu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)

Abstract

Artificial disorder was introduced gradually into monolayer graphene by controlling Ga+ ion irradiation and the corresponding electronic transport properties regulated by gate voltage, source-drain voltage, temperature, and magnetic field were studied experimentally. An unsaturated positive magnetoresistance (MR) up to 100% at ∼5 T was observed in as-fabricated graphene, while there is significant negative MR in disordered graphene. This phenomenon was attributed to the monocrystalline breaking and crystallite-boundary scattering in disordered graphene.

Original languageEnglish
Article number222502
JournalApplied Physics Letters
Volume98
Issue number22
DOIs
Publication statusPublished - 30 May 2011
Externally publishedYes

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