Abstract
Artificial disorder was introduced gradually into monolayer graphene by controlling Ga+ ion irradiation and the corresponding electronic transport properties regulated by gate voltage, source-drain voltage, temperature, and magnetic field were studied experimentally. An unsaturated positive magnetoresistance (MR) up to 100% at ∼5 T was observed in as-fabricated graphene, while there is significant negative MR in disordered graphene. This phenomenon was attributed to the monocrystalline breaking and crystallite-boundary scattering in disordered graphene.
Original language | English |
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Article number | 222502 |
Journal | Applied Physics Letters |
Volume | 98 |
Issue number | 22 |
DOIs | |
Publication status | Published - 30 May 2011 |
Externally published | Yes |