Formation of p-n-p junction with ionic liquid gate in graphene

Xin He; Ning Tang; Li Gao; Junxi Duan; Yuewei Zhang; Fangchao Lu; Fujun Xu; Xinqiang Wang; Xuelin Yang; Weikun Ge; Bo Shen

doi:10.1063/1.4870656

Formation of p-n-p junction with ionic liquid gate in graphene

Xin He, Ning Tang^*, Li Gao, Junxi Duan, Yuewei Zhang, Fangchao Lu, Fujun Xu, Xinqiang Wang, Xuelin Yang, Weikun Ge, Bo Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.

Original language	English
Article number	143102
Journal	Applied Physics Letters
Volume	104
Issue number	14
DOIs	https://doi.org/10.1063/1.4870656
Publication status	Published - 7 Apr 2014
Externally published	Yes

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@article{41e6c3d2c54140aabb7583c656f9c3b4,

title = "Formation of p-n-p junction with ionic liquid gate in graphene",

abstract = "Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.",

author = "Xin He and Ning Tang and Li Gao and Junxi Duan and Yuewei Zhang and Fangchao Lu and Fujun Xu and Xinqiang Wang and Xuelin Yang and Weikun Ge and Bo Shen",

year = "2014",

month = apr,

day = "7",

doi = "10.1063/1.4870656",

language = "English",

volume = "104",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Formation of p-n-p junction with ionic liquid gate in graphene

AU - He, Xin

AU - Tang, Ning

AU - Gao, Li

AU - Duan, Junxi

AU - Zhang, Yuewei

AU - Lu, Fangchao

AU - Xu, Fujun

AU - Wang, Xinqiang

AU - Yang, Xuelin

AU - Ge, Weikun

AU - Shen, Bo

PY - 2014/4/7

Y1 - 2014/4/7

N2 - Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.

AB - Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.

UR - http://www.scopus.com/inward/record.url?scp=84899003665&partnerID=8YFLogxK

U2 - 10.1063/1.4870656

DO - 10.1063/1.4870656

M3 - Article

AN - SCOPUS:84899003665

SN - 0003-6951

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143102

ER -

Formation of p-n-p junction with ionic liquid gate in graphene

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