He, X., Tang, N., Gao, L., Duan, J., Zhang, Y., Lu, F., Xu, F., Wang, X., Yang, X., Ge, W., & Shen, B. (2014). Formation of p-n-p junction with ionic liquid gate in graphene. Applied Physics Letters, 104(14), Article 143102. https://doi.org/10.1063/1.4870656
He, Xin ; Tang, Ning ; Gao, Li et al. / Formation of p-n-p junction with ionic liquid gate in graphene. In: Applied Physics Letters. 2014 ; Vol. 104, No. 14.
@article{41e6c3d2c54140aabb7583c656f9c3b4,
title = "Formation of p-n-p junction with ionic liquid gate in graphene",
abstract = "Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.",
author = "Xin He and Ning Tang and Li Gao and Junxi Duan and Yuewei Zhang and Fangchao Lu and Fujun Xu and Xinqiang Wang and Xuelin Yang and Weikun Ge and Bo Shen",
year = "2014",
month = apr,
day = "7",
doi = "10.1063/1.4870656",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "14",
}
He, X, Tang, N, Gao, L, Duan, J, Zhang, Y, Lu, F, Xu, F, Wang, X, Yang, X, Ge, W & Shen, B 2014, 'Formation of p-n-p junction with ionic liquid gate in graphene', Applied Physics Letters, vol. 104, no. 14, 143102. https://doi.org/10.1063/1.4870656
Formation of p-n-p junction with ionic liquid gate in graphene. / He, Xin; Tang, Ning; Gao, Li et al.
In:
Applied Physics Letters, Vol. 104, No. 14, 143102, 07.04.2014.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Formation of p-n-p junction with ionic liquid gate in graphene
AU - He, Xin
AU - Tang, Ning
AU - Gao, Li
AU - Duan, Junxi
AU - Zhang, Yuewei
AU - Lu, Fangchao
AU - Xu, Fujun
AU - Wang, Xinqiang
AU - Yang, Xuelin
AU - Ge, Weikun
AU - Shen, Bo
PY - 2014/4/7
Y1 - 2014/4/7
N2 - Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.
AB - Ionic liquid gating is a technique which is much more efficient than solid gating to tune carrier density. To observe the electronic properties of such a highly doped graphene device, a top gate made of ionic liquid has been used. By sweeping both the top and back gate voltage, a p-n-p junction has been created. The mechanism of forming the p-n-p junction has been discussed. Tuning the carrier density by ionic liquid gate can be an efficient method to be used in flexible electronics.
UR - http://www.scopus.com/inward/record.url?scp=84899003665&partnerID=8YFLogxK
U2 - 10.1063/1.4870656
DO - 10.1063/1.4870656
M3 - Article
AN - SCOPUS:84899003665
SN - 0003-6951
VL - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 14
M1 - 143102
ER -
He X, Tang N, Gao L, Duan J, Zhang Y, Lu F et al. Formation of p-n-p junction with ionic liquid gate in graphene. Applied Physics Letters. 2014 Apr 7;104(14):143102. doi: 10.1063/1.4870656
