Ferromagnetism in Cr-doped topological insulator TlSbTe2

Zhiwei Wang; Kouji Segawa; Satoshi Sasaki; A. A. Taskin; Yoichi Ando

doi:10.1063/1.4922002

Ferromagnetism in Cr-doped topological insulator TlSbTe₂

Zhiwei Wang, Kouji Segawa, Satoshi Sasaki, A. A. Taskin, Yoichi Ando

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23 Citations (Scopus)

Abstract

We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe₂. Single crystals of Tl_1-xCr_xSbTe₂ were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe₂ matrix only within the solubility limit of about 1%. The Curie temperature θ_C was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μ_B (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe₂ by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe₂ crystals within the solubility limit of Cr which turned out to be also about 1%.

Original language	English
Article number	083302
Journal	APL Materials
Volume	3
Issue number	8
DOIs	https://doi.org/10.1063/1.4922002
Publication status	Published - 1 Aug 2015
Externally published	Yes

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Wang, Z., Segawa, K., Sasaki, S., Taskin, A. A., & Ando, Y. (2015). Ferromagnetism in Cr-doped topological insulator TlSbTe₂. APL Materials, 3(8), Article 083302. https://doi.org/10.1063/1.4922002

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abstract = "We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl1-xCrxSbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θC was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μB (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.",

author = "Zhiwei Wang and Kouji Segawa and Satoshi Sasaki and Taskin, {A. A.} and Yoichi Ando",

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AU - Wang, Zhiwei

AU - Segawa, Kouji

AU - Sasaki, Satoshi

AU - Taskin, A. A.

AU - Ando, Yoichi

PY - 2015/8/1

Y1 - 2015/8/1

N2 - We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl1-xCrxSbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θC was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μB (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.

AB - We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl1-xCrxSbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θC was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μB (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.

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Ferromagnetism in Cr-doped topological insulator TlSbTe₂

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