Dong, X., Li, Y., Li, J., Peng, X., Qiao, L., Chen, D., Yang, H., Xiong, X., Wang, Q., Li, X., Duan, J., Han, J., & Xiao, W. (2019). Epitaxial Growth and Structural Properties of Bi(110) Thin Films on TiSe2 Substrates. Journal of Physical Chemistry C, 123(22), 13637-13641. https://doi.org/10.1021/acs.jpcc.9b01923
Dong, Xu ; Li, Yongkai ; Li, Ji et al. / Epitaxial Growth and Structural Properties of Bi(110) Thin Films on TiSe2 Substrates. In: Journal of Physical Chemistry C. 2019 ; Vol. 123, No. 22. pp. 13637-13641.
@article{8b169ad7bfc64b0ba0bdc9bf64d0e86c,
title = "Epitaxial Growth and Structural Properties of Bi(110) Thin Films on TiSe2 Substrates",
abstract = "We report the growth and structural properties of Bi thin films on TiSe2 substrates by using a low-temperature scanning tunneling microscope. Extended Bi(110) thin films are formed on the TiSe2 substrates and adopt a distorted black-phosphorus structure at room temperature (RT). The diagonal of the Bi(110) rectangular unit cell is parallel to the close-packed direction of the top-layer Se atoms of the TiSe2 substrates, resulting in the formation of a stripe-shaped commensurate moir{\'e} pattern with a periodicity of 38.5 {\AA} at RT. Meanwhile, the charge density wave phase transition of the TiSe2 substrate and the different coefficients of thermal expansion of Bi(110) and TiSe2 lead to the formation of a quasi-hexagonal incommensurate moir{\'e} pattern with a periodicity of 14.5 {\AA} at 77 K. In particular, the combination of domains with twisting angles of 30° or 60° results in the formation of various domain boundaries. Our work is very helpful for understanding and tuning the structural and electronic properties of epitaxial Bi(110) thin films.",
author = "Xu Dong and Yongkai Li and Ji Li and Xianglin Peng and Lu Qiao and Dongyun Chen and Huixia Yang and Xiaolu Xiong and Qinsheng Wang and Xiang Li and Junxi Duan and Junfeng Han and Wende Xiao",
note = "Publisher Copyright: {\textcopyright} 2019 American Chemical Society.",
year = "2019",
month = jun,
day = "6",
doi = "10.1021/acs.jpcc.9b01923",
language = "English",
volume = "123",
pages = "13637--13641",
journal = "Journal of Physical Chemistry C",
issn = "1932-7447",
publisher = "American Chemical Society",
number = "22",
}
Dong, X, Li, Y, Li, J, Peng, X, Qiao, L, Chen, D, Yang, H, Xiong, X, Wang, Q, Li, X, Duan, J, Han, J & Xiao, W 2019, 'Epitaxial Growth and Structural Properties of Bi(110) Thin Films on TiSe2 Substrates', Journal of Physical Chemistry C, vol. 123, no. 22, pp. 13637-13641. https://doi.org/10.1021/acs.jpcc.9b01923
Epitaxial Growth and Structural Properties of Bi(110) Thin Films on TiSe2 Substrates. / Dong, Xu; Li, Yongkai; Li, Ji et al.
In:
Journal of Physical Chemistry C, Vol. 123, No. 22, 06.06.2019, p. 13637-13641.
Research output: Contribution to journal › Article › peer-review
TY - JOUR
T1 - Epitaxial Growth and Structural Properties of Bi(110) Thin Films on TiSe2 Substrates
AU - Dong, Xu
AU - Li, Yongkai
AU - Li, Ji
AU - Peng, Xianglin
AU - Qiao, Lu
AU - Chen, Dongyun
AU - Yang, Huixia
AU - Xiong, Xiaolu
AU - Wang, Qinsheng
AU - Li, Xiang
AU - Duan, Junxi
AU - Han, Junfeng
AU - Xiao, Wende
N1 - Publisher Copyright:
© 2019 American Chemical Society.
PY - 2019/6/6
Y1 - 2019/6/6
N2 - We report the growth and structural properties of Bi thin films on TiSe2 substrates by using a low-temperature scanning tunneling microscope. Extended Bi(110) thin films are formed on the TiSe2 substrates and adopt a distorted black-phosphorus structure at room temperature (RT). The diagonal of the Bi(110) rectangular unit cell is parallel to the close-packed direction of the top-layer Se atoms of the TiSe2 substrates, resulting in the formation of a stripe-shaped commensurate moiré pattern with a periodicity of 38.5 Å at RT. Meanwhile, the charge density wave phase transition of the TiSe2 substrate and the different coefficients of thermal expansion of Bi(110) and TiSe2 lead to the formation of a quasi-hexagonal incommensurate moiré pattern with a periodicity of 14.5 Å at 77 K. In particular, the combination of domains with twisting angles of 30° or 60° results in the formation of various domain boundaries. Our work is very helpful for understanding and tuning the structural and electronic properties of epitaxial Bi(110) thin films.
AB - We report the growth and structural properties of Bi thin films on TiSe2 substrates by using a low-temperature scanning tunneling microscope. Extended Bi(110) thin films are formed on the TiSe2 substrates and adopt a distorted black-phosphorus structure at room temperature (RT). The diagonal of the Bi(110) rectangular unit cell is parallel to the close-packed direction of the top-layer Se atoms of the TiSe2 substrates, resulting in the formation of a stripe-shaped commensurate moiré pattern with a periodicity of 38.5 Å at RT. Meanwhile, the charge density wave phase transition of the TiSe2 substrate and the different coefficients of thermal expansion of Bi(110) and TiSe2 lead to the formation of a quasi-hexagonal incommensurate moiré pattern with a periodicity of 14.5 Å at 77 K. In particular, the combination of domains with twisting angles of 30° or 60° results in the formation of various domain boundaries. Our work is very helpful for understanding and tuning the structural and electronic properties of epitaxial Bi(110) thin films.
UR - http://www.scopus.com/inward/record.url?scp=85067193591&partnerID=8YFLogxK
U2 - 10.1021/acs.jpcc.9b01923
DO - 10.1021/acs.jpcc.9b01923
M3 - Article
AN - SCOPUS:85067193591
SN - 1932-7447
VL - 123
SP - 13637
EP - 13641
JO - Journal of Physical Chemistry C
JF - Journal of Physical Chemistry C
IS - 22
ER -
Dong X, Li Y, Li J, Peng X, Qiao L, Chen D et al. Epitaxial Growth and Structural Properties of Bi(110) Thin Films on TiSe2 Substrates. Journal of Physical Chemistry C. 2019 Jun 6;123(22):13637-13641. doi: 10.1021/acs.jpcc.9b01923
