Enhanced photoresponse in interfacial gated graphene phototransistor with ultrathin Al2O3 Dielectric

Li Tao; Hao Li; Mengxing Sun; Dan Xie; Xinming Li; Jian Bin Xu

doi:10.1109/LED.2018.2843804

Enhanced photoresponse in interfacial gated graphene phototransistor with ultrathin Al₂O₃ Dielectric

Li Tao, Hao Li, Mengxing Sun, Dan Xie, Xinming Li, Jian Bin Xu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

An interfacial-gated graphene phototransistor sensitized by silicon substrate with an ultrathin 3-nm Al₂O₃ dielectric layer is demonstrated. When applying gate voltages larger than a certain threshold, the phototransistor exhibits a photo-induced switching-on behavior, giving rise to its capacity of detecting light with the ultralow power of 470 pW, with a high responsivity of 1.4 × 10⁴ A/W. The temporal measurements unveil a fast photoresponse speed with a rising time of 2μs. The novel channel on-state trigged by light was not observed in a control device with 16-nm Al₂O₃. The difference of transfer characteristics in the dark and under illumination is assigned mainly to the photo-assisted modification of the silicon depletion region.

Original language	English
Pages (from-to)	987-990
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	7
DOIs	https://doi.org/10.1109/LED.2018.2843804
Publication status	Published - Jul 2018
Externally published	Yes

Keywords

Graphene
depletion capacitance
interfacial gating
photodetector

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10.1109/LED.2018.2843804

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@article{3875d16b06974874bf596993db69b684,

title = "Enhanced photoresponse in interfacial gated graphene phototransistor with ultrathin Al2O3 Dielectric",

abstract = "An interfacial-gated graphene phototransistor sensitized by silicon substrate with an ultrathin 3-nm Al2O3 dielectric layer is demonstrated. When applying gate voltages larger than a certain threshold, the phototransistor exhibits a photo-induced switching-on behavior, giving rise to its capacity of detecting light with the ultralow power of 470 pW, with a high responsivity of 1.4 × 104 A/W. The temporal measurements unveil a fast photoresponse speed with a rising time of 2μs. The novel channel on-state trigged by light was not observed in a control device with 16-nm Al2O3. The difference of transfer characteristics in the dark and under illumination is assigned mainly to the photo-assisted modification of the silicon depletion region.",

keywords = "Graphene, depletion capacitance, interfacial gating, photodetector",

author = "Li Tao and Hao Li and Mengxing Sun and Dan Xie and Xinming Li and Xu, {Jian Bin}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2018",

month = jul,

doi = "10.1109/LED.2018.2843804",

language = "English",

volume = "39",

pages = "987--990",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Enhanced photoresponse in interfacial gated graphene phototransistor with ultrathin Al2O3 Dielectric

AU - Tao, Li

AU - Li, Hao

AU - Sun, Mengxing

AU - Xie, Dan

AU - Li, Xinming

AU - Xu, Jian Bin

PY - 2018/7

Y1 - 2018/7

N2 - An interfacial-gated graphene phototransistor sensitized by silicon substrate with an ultrathin 3-nm Al2O3 dielectric layer is demonstrated. When applying gate voltages larger than a certain threshold, the phototransistor exhibits a photo-induced switching-on behavior, giving rise to its capacity of detecting light with the ultralow power of 470 pW, with a high responsivity of 1.4 × 104 A/W. The temporal measurements unveil a fast photoresponse speed with a rising time of 2μs. The novel channel on-state trigged by light was not observed in a control device with 16-nm Al2O3. The difference of transfer characteristics in the dark and under illumination is assigned mainly to the photo-assisted modification of the silicon depletion region.

AB - An interfacial-gated graphene phototransistor sensitized by silicon substrate with an ultrathin 3-nm Al2O3 dielectric layer is demonstrated. When applying gate voltages larger than a certain threshold, the phototransistor exhibits a photo-induced switching-on behavior, giving rise to its capacity of detecting light with the ultralow power of 470 pW, with a high responsivity of 1.4 × 104 A/W. The temporal measurements unveil a fast photoresponse speed with a rising time of 2μs. The novel channel on-state trigged by light was not observed in a control device with 16-nm Al2O3. The difference of transfer characteristics in the dark and under illumination is assigned mainly to the photo-assisted modification of the silicon depletion region.

KW - Graphene

KW - depletion capacitance

KW - interfacial gating

KW - photodetector

UR - http://www.scopus.com/inward/record.url?scp=85048003645&partnerID=8YFLogxK

U2 - 10.1109/LED.2018.2843804

DO - 10.1109/LED.2018.2843804

M3 - Article

AN - SCOPUS:85048003645

SN - 0741-3106

VL - 39

SP - 987

EP - 990

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

ER -

Enhanced photoresponse in interfacial gated graphene phototransistor with ultrathin Al₂O₃ Dielectric

Abstract

Keywords

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