Electroluminescence and its excitation mechanism of SiOx films deposited by electron-beam evaporation

Lei Qian; Feng Teng; Zheng Xu; Shengyi Yang; Yanbing Hou; Xurong Xu

doi:10.1016/j.physb.2007.11.008

Electroluminescence and its excitation mechanism of SiO_x films deposited by electron-beam evaporation

Lei Qian^*, Feng Teng, Zheng Xu, Shengyi Yang, Yanbing Hou, Xurong Xu

^*Corresponding author for this work

Beijing Jiaotong University

Research output: Contribution to journal › Article › peer-review

Abstract

Blue electroluminescence from SiO_x films deposited by electron beam evaporation was observed. This blue emission blueshifted from 450 to 410 nm with increasing applied voltage. The dependences of blue emission on applied voltage, frequency and conduction current were studied. Our experimental data support that blue emission from SiO_x films is the result of both recombination of charge carriers injected from opposite electrodes and impact excitation of hot electrons, the recombination of carriers injected is dominant in low and medium electric fields but hot electron impact excitation is dominant under high electric fields.

Original language	English
Pages (from-to)	1975-1978
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	403
Issue number	12
DOIs	https://doi.org/10.1016/j.physb.2007.11.008
Publication status	Published - 1 Jun 2008
Externally published	Yes

Keywords

Blue emission
Electroluminescence
SiO films

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10.1016/j.physb.2007.11.008

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Qian, L., Teng, F., Xu, Z., Yang, S., Hou, Y., & Xu, X. (2008). Electroluminescence and its excitation mechanism of SiO_x films deposited by electron-beam evaporation. Physica B: Condensed Matter, 403(12), 1975-1978. https://doi.org/10.1016/j.physb.2007.11.008

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abstract = "Blue electroluminescence from SiOx films deposited by electron beam evaporation was observed. This blue emission blueshifted from 450 to 410 nm with increasing applied voltage. The dependences of blue emission on applied voltage, frequency and conduction current were studied. Our experimental data support that blue emission from SiOx films is the result of both recombination of charge carriers injected from opposite electrodes and impact excitation of hot electrons, the recombination of carriers injected is dominant in low and medium electric fields but hot electron impact excitation is dominant under high electric fields.",

keywords = "Blue emission, Electroluminescence, SiO films",

author = "Lei Qian and Feng Teng and Zheng Xu and Shengyi Yang and Yanbing Hou and Xurong Xu",

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T1 - Electroluminescence and its excitation mechanism of SiOx films deposited by electron-beam evaporation

AU - Qian, Lei

AU - Teng, Feng

AU - Xu, Zheng

AU - Yang, Shengyi

AU - Hou, Yanbing

AU - Xu, Xurong

PY - 2008/6/1

Y1 - 2008/6/1

N2 - Blue electroluminescence from SiOx films deposited by electron beam evaporation was observed. This blue emission blueshifted from 450 to 410 nm with increasing applied voltage. The dependences of blue emission on applied voltage, frequency and conduction current were studied. Our experimental data support that blue emission from SiOx films is the result of both recombination of charge carriers injected from opposite electrodes and impact excitation of hot electrons, the recombination of carriers injected is dominant in low and medium electric fields but hot electron impact excitation is dominant under high electric fields.

AB - Blue electroluminescence from SiOx films deposited by electron beam evaporation was observed. This blue emission blueshifted from 450 to 410 nm with increasing applied voltage. The dependences of blue emission on applied voltage, frequency and conduction current were studied. Our experimental data support that blue emission from SiOx films is the result of both recombination of charge carriers injected from opposite electrodes and impact excitation of hot electrons, the recombination of carriers injected is dominant in low and medium electric fields but hot electron impact excitation is dominant under high electric fields.

KW - Blue emission

KW - Electroluminescence

KW - SiO films

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U2 - 10.1016/j.physb.2007.11.008

DO - 10.1016/j.physb.2007.11.008

M3 - Article

AN - SCOPUS:41949124885

SN - 0921-4526

VL - 403

SP - 1975

EP - 1978

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 12

ER -

Electroluminescence and its excitation mechanism of SiO_x films deposited by electron-beam evaporation

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Keywords

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