Effects of ion energy on ion beam assisted deposition textured yttria stabilized zirconia buffer layer of coated conductor

Z. Wang*, K. Shi, H. Chen, F. Feng, J. C. Sun, Z. Han

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

High quality biaxially textured yttria stabilized zirconia (YSZ) thin films, as buffer layers of coated conductors, were deposited on hastelloy substrates by ion beam assisted deposition (IBAD) method with different assisting ion energy Ei. The roles of assisting ion beam and the influences of ion energy Ei on the structure of the films were studied. It was found that both the out-of-plane alignment and in-plane texture of the IBAD-YSZ films are sensitive to the variation of Ei. The results are explained in the paper by different damage tolerance of the differently oriented grains to ion bombardment.

Original languageEnglish
Pages (from-to)2044-2047
Number of pages4
JournalThin Solid Films
Volume517
Issue number6
DOIs
Publication statusPublished - 30 Jan 2009

Keywords

  • Biaxial texture
  • Buffer layer
  • Coated conductor
  • Ion beam assisted deposition
  • Surface morphology
  • X-ray diffraction
  • Yttria stabilized zirconia

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