Effects of compressive stress on the nonlinear electromechanical behavior of ferroelectric ceramics

Faxin Li; Daining Fang; Jung Ju Lee; Hyun Cheol Kim

doi:10.1007/s11431-004-5120-y

Effects of compressive stress on the nonlinear electromechanical behavior of ferroelectric ceramics

Faxin Li, Daining Fang^*, Jung Ju Lee, Hyun Cheol Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The effects of compressive stress parallel and perpendicular to the polar axis of PZT ceramics on the nonlinear electromechanical behavior of the materials has been experimentally studied. A domain-switching model that divides each 180° switching to two successive 90° switching is proposed to explain these effects. In the case of stress parallel to the polar axis, domain switching in the ceramics is approximately axisymmetric and can be simulated by an analytical model. While in the case of stress perpendicular to the polar axis, domain switching is three-dimensional and cannot be simplified. The simulated results that match the experiments well show the validity of the proposed domain-switching model.

Original language	English
Pages (from-to)	29-37
Number of pages	9
Journal	Science in China, Series E: Technological Sciences
Volume	49
Issue number	1
DOIs	https://doi.org/10.1007/s11431-004-5120-y
Publication status	Published - Jan 2006
Externally published	Yes

Keywords

Domain switching
Electromechanical
Ferroelectric ceramics
PZT

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10.1007/s11431-004-5120-y

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abstract = "The effects of compressive stress parallel and perpendicular to the polar axis of PZT ceramics on the nonlinear electromechanical behavior of the materials has been experimentally studied. A domain-switching model that divides each 180° switching to two successive 90° switching is proposed to explain these effects. In the case of stress parallel to the polar axis, domain switching in the ceramics is approximately axisymmetric and can be simulated by an analytical model. While in the case of stress perpendicular to the polar axis, domain switching is three-dimensional and cannot be simplified. The simulated results that match the experiments well show the validity of the proposed domain-switching model.",

keywords = "Domain switching, Electromechanical, Ferroelectric ceramics, PZT",

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AU - Li, Faxin

AU - Fang, Daining

AU - Lee, Jung Ju

AU - Kim, Hyun Cheol

PY - 2006/1

Y1 - 2006/1

N2 - The effects of compressive stress parallel and perpendicular to the polar axis of PZT ceramics on the nonlinear electromechanical behavior of the materials has been experimentally studied. A domain-switching model that divides each 180° switching to two successive 90° switching is proposed to explain these effects. In the case of stress parallel to the polar axis, domain switching in the ceramics is approximately axisymmetric and can be simulated by an analytical model. While in the case of stress perpendicular to the polar axis, domain switching is three-dimensional and cannot be simplified. The simulated results that match the experiments well show the validity of the proposed domain-switching model.

AB - The effects of compressive stress parallel and perpendicular to the polar axis of PZT ceramics on the nonlinear electromechanical behavior of the materials has been experimentally studied. A domain-switching model that divides each 180° switching to two successive 90° switching is proposed to explain these effects. In the case of stress parallel to the polar axis, domain switching in the ceramics is approximately axisymmetric and can be simulated by an analytical model. While in the case of stress perpendicular to the polar axis, domain switching is three-dimensional and cannot be simplified. The simulated results that match the experiments well show the validity of the proposed domain-switching model.

KW - Domain switching

KW - Electromechanical

KW - Ferroelectric ceramics

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IS - 1

ER -

Effects of compressive stress on the nonlinear electromechanical behavior of ferroelectric ceramics

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Keywords

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