TY - GEN
T1 - Effect of strain rate on the simulation of MEMS safety and arming device
AU - Ma, Wenrui
AU - He, Guang
PY - 2014
Y1 - 2014
N2 - Under launch impact load, LIGA nickel that manufacturing MEMS fuze safety and arming (S&A) device will have obvious strain rate effect. By using finite element analysis software ANSYS/LS-DYNA, simulation models of a small-caliber ammunition MEMS fuze setback S&A device with strain rate effect and without strain rate effect were respectively established. The results of the two simulation modules were quite different. Comparisons between experimental results and simulation results show that simulation results considering strain rate effect agree well with experimental results, which proves strain rate effect should not be ignored in the simulation of MEMS S&A device.
AB - Under launch impact load, LIGA nickel that manufacturing MEMS fuze safety and arming (S&A) device will have obvious strain rate effect. By using finite element analysis software ANSYS/LS-DYNA, simulation models of a small-caliber ammunition MEMS fuze setback S&A device with strain rate effect and without strain rate effect were respectively established. The results of the two simulation modules were quite different. Comparisons between experimental results and simulation results show that simulation results considering strain rate effect agree well with experimental results, which proves strain rate effect should not be ignored in the simulation of MEMS S&A device.
KW - Dynamic simulation; ANSYS/LS-DYNA
KW - Fuze
KW - MEMS safety and arming device
KW - Strain rate effect
UR - http://www.scopus.com/inward/record.url?scp=84900462928&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.609-610.849
DO - 10.4028/www.scientific.net/KEM.609-610.849
M3 - Conference contribution
AN - SCOPUS:84900462928
SN - 9783038350712
T3 - Key Engineering Materials
SP - 849
EP - 855
BT - Micro-Nano Technology XV
PB - Trans Tech Publications Ltd.
T2 - 15th Annual Conference and 4th International Conference of the Chinese Society of Micro-Nano Technology, CSMNT 2013
Y2 - 3 November 2013 through 6 November 2013
ER -