Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0.5Zr0.5O2 ferroelectric thin films

Yunzhe Zheng; Yuke Zhang; Tianjiao Xin; Yilin Xu; Shuangquan Qu; Junding Zheng; Zhaomeng Gao; Qilan Zhong; Yiwei Wang; Xiaoyu Feng; Yonghui Zheng; Yan Cheng; Ruiwen Shao; Fang Lin; Xiaoling Lin; He Tian; Rong Huang; Chungang Duan; Hangbing Lyu

doi:10.1016/j.mtnano.2023.100406

Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf_0.5Zr_0.5O₂ ferroelectric thin films

Yunzhe Zheng, Yuke Zhang, Tianjiao Xin, Yilin Xu, Shuangquan Qu, Junding Zheng, Zhaomeng Gao, Qilan Zhong, Yiwei Wang, Xiaoyu Feng, Yonghui Zheng, Yan Cheng^*, Ruiwen Shao, Fang Lin, Xiaoling Lin, He Tian, Rong Huang, Chungang Duan, Hangbing Lyu^*

^*Corresponding author for this work

School of Medical and Technology

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Domain walls (DWs) play an essential role in altering the polarization and related properties of ferroelectric materials, and are regulated by the mechanism of changing atomic configuration. However, compared with perovskite ferroelectrics, the DWs in hafnia-based fluorite-structure ferroelectric is experimentally lacking, especially with regard to detailed studies of atomic-scale structures. The present work used spherical aberration-corrected transmission electron microscope combined with in-situ technique to ascertain the origin, atomic arrangements of 90° DWs in Hf_0.5Zr_0.5O₂ thin films. Different types of 90° DWs were found to exhibit varying migration behaviors in response to the concentration of oxygen vacancies. Point defects and corresponding changes in the local strain field are proposed to drive DW switching in this material. These new insights into the atomic-scale characteristics of 90° DWs are expected to assist in elucidating the structure of DWs and improve our understanding of the ferroelectric characteristics of new type hafnia-based materials.

Original language	English
Article number	100406
Journal	Materials Today Nano
Volume	24
DOIs	https://doi.org/10.1016/j.mtnano.2023.100406
Publication status	Published - Dec 2023

Keywords

90° domain wall
Ferroelectric
HZO
Scanning transmission electron microscope

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10.1016/j.mtnano.2023.100406

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Zheng, Y., Zhang, Y., Xin, T., Xu, Y., Qu, S., Zheng, J., Gao, Z., Zhong, Q., Wang, Y., Feng, X., Zheng, Y., Cheng, Y., Shao, R., Lin, F., Lin, X., Tian, H., Huang, R., Duan, C., & Lyu, H. (2023). Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf_0.5Zr_0.5O₂ ferroelectric thin films. Materials Today Nano, 24, Article 100406. https://doi.org/10.1016/j.mtnano.2023.100406

@article{48f4c9ae9ece4da5a3c088dd66052a4a,

title = "Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0.5Zr0.5O2 ferroelectric thin films",

abstract = "Domain walls (DWs) play an essential role in altering the polarization and related properties of ferroelectric materials, and are regulated by the mechanism of changing atomic configuration. However, compared with perovskite ferroelectrics, the DWs in hafnia-based fluorite-structure ferroelectric is experimentally lacking, especially with regard to detailed studies of atomic-scale structures. The present work used spherical aberration-corrected transmission electron microscope combined with in-situ technique to ascertain the origin, atomic arrangements of 90° DWs in Hf0.5Zr0.5O2 thin films. Different types of 90° DWs were found to exhibit varying migration behaviors in response to the concentration of oxygen vacancies. Point defects and corresponding changes in the local strain field are proposed to drive DW switching in this material. These new insights into the atomic-scale characteristics of 90° DWs are expected to assist in elucidating the structure of DWs and improve our understanding of the ferroelectric characteristics of new type hafnia-based materials.",

keywords = "90° domain wall, Ferroelectric, HZO, Scanning transmission electron microscope",

author = "Yunzhe Zheng and Yuke Zhang and Tianjiao Xin and Yilin Xu and Shuangquan Qu and Junding Zheng and Zhaomeng Gao and Qilan Zhong and Yiwei Wang and Xiaoyu Feng and Yonghui Zheng and Yan Cheng and Ruiwen Shao and Fang Lin and Xiaoling Lin and He Tian and Rong Huang and Chungang Duan and Hangbing Lyu",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2023",

month = dec,

doi = "10.1016/j.mtnano.2023.100406",

language = "English",

volume = "24",

journal = "Materials Today Nano",

issn = "2588-8420",

publisher = "Elsevier Ltd.",

}

Zheng, Y, Zhang, Y, Xin, T, Xu, Y, Qu, S, Zheng, J, Gao, Z, Zhong, Q, Wang, Y, Feng, X, Zheng, Y, Cheng, Y, Shao, R, Lin, F, Lin, X, Tian, H, Huang, R, Duan, C & Lyu, H 2023, 'Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf_0.5Zr_0.5O₂ ferroelectric thin films', Materials Today Nano, vol. 24, 100406. https://doi.org/10.1016/j.mtnano.2023.100406

TY - JOUR

T1 - Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf0.5Zr0.5O2 ferroelectric thin films

AU - Zheng, Yunzhe

AU - Zhang, Yuke

AU - Xin, Tianjiao

AU - Xu, Yilin

AU - Qu, Shuangquan

AU - Zheng, Junding

AU - Gao, Zhaomeng

AU - Zhong, Qilan

AU - Wang, Yiwei

AU - Feng, Xiaoyu

AU - Zheng, Yonghui

AU - Cheng, Yan

AU - Shao, Ruiwen

AU - Lin, Fang

AU - Lin, Xiaoling

AU - Tian, He

AU - Huang, Rong

AU - Duan, Chungang

AU - Lyu, Hangbing

PY - 2023/12

Y1 - 2023/12

N2 - Domain walls (DWs) play an essential role in altering the polarization and related properties of ferroelectric materials, and are regulated by the mechanism of changing atomic configuration. However, compared with perovskite ferroelectrics, the DWs in hafnia-based fluorite-structure ferroelectric is experimentally lacking, especially with regard to detailed studies of atomic-scale structures. The present work used spherical aberration-corrected transmission electron microscope combined with in-situ technique to ascertain the origin, atomic arrangements of 90° DWs in Hf0.5Zr0.5O2 thin films. Different types of 90° DWs were found to exhibit varying migration behaviors in response to the concentration of oxygen vacancies. Point defects and corresponding changes in the local strain field are proposed to drive DW switching in this material. These new insights into the atomic-scale characteristics of 90° DWs are expected to assist in elucidating the structure of DWs and improve our understanding of the ferroelectric characteristics of new type hafnia-based materials.

AB - Domain walls (DWs) play an essential role in altering the polarization and related properties of ferroelectric materials, and are regulated by the mechanism of changing atomic configuration. However, compared with perovskite ferroelectrics, the DWs in hafnia-based fluorite-structure ferroelectric is experimentally lacking, especially with regard to detailed studies of atomic-scale structures. The present work used spherical aberration-corrected transmission electron microscope combined with in-situ technique to ascertain the origin, atomic arrangements of 90° DWs in Hf0.5Zr0.5O2 thin films. Different types of 90° DWs were found to exhibit varying migration behaviors in response to the concentration of oxygen vacancies. Point defects and corresponding changes in the local strain field are proposed to drive DW switching in this material. These new insights into the atomic-scale characteristics of 90° DWs are expected to assist in elucidating the structure of DWs and improve our understanding of the ferroelectric characteristics of new type hafnia-based materials.

KW - 90° domain wall

KW - Ferroelectric

KW - HZO

KW - Scanning transmission electron microscope

UR - http://www.scopus.com/inward/record.url?scp=85169791938&partnerID=8YFLogxK

U2 - 10.1016/j.mtnano.2023.100406

DO - 10.1016/j.mtnano.2023.100406

M3 - Article

AN - SCOPUS:85169791938

SN - 2588-8420

VL - 24

JO - Materials Today Nano

JF - Materials Today Nano

M1 - 100406

ER -

Direct atomic-scale visualization of the 90° domain walls and their migrations in Hf_0.5Zr_0.5O₂ ferroelectric thin films

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Keywords

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