Diffusion and ballistic contributions of electronelectron interaction to the conductivity in an Al0.26Ga0.74NAlNGaN heterostructure

W. Z. Zhou; T. Lin; L. Y. Shang; G. Yu; K. Han; J. X. Duan; N. Tang; B. Shen; J. H. Chu

doi:10.1016/j.ssc.2011.04.003

Diffusion and ballistic contributions of electronelectron interaction to the conductivity in an Al_0.26Ga_0.74NAlNGaN heterostructure

W. Z. Zhou, T. Lin, L. Y. Shang, G. Yu, K. Han, J. X. Duan, N. Tang, B. Shen, J. H. Chu

Research output: Contribution to journal › Article › peer-review

Abstract

The results of an experimental study of quantum correction of electronelectron interaction (EEI) to the conductivity of two-dimensional electron gas (2DEG) in an undoped Al_0.26Ga_0.74NAlNGaN heterostructure are reported. A small but significant decrease of the Hall slope with the increase of temperature was discovered. This is not due to the increase of electron concentration as temperature increases but to the EEI effect. Both diffusion and ballistic contributions of EEI to the conductivity of 2DEG were observed. As the temperature increases, the negative diffusion EEI correction to the conductivity increases in an absolute value while the ballistic EEI correction reduces to a renormalization of the transport mobility.

Original language	English
Pages (from-to)	879-882
Number of pages	4
Journal	Solid State Communications
Volume	151
Issue number	12
DOIs	https://doi.org/10.1016/j.ssc.2011.04.003
Publication status	Published - Jun 2011
Externally published	Yes

Keywords

A. Heterojunctions
A. Nanostructures
D. Electronelectron interactions

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10.1016/j.ssc.2011.04.003

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title = "Diffusion and ballistic contributions of electronelectron interaction to the conductivity in an Al0.26Ga0.74NAlNGaN heterostructure",

abstract = "The results of an experimental study of quantum correction of electronelectron interaction (EEI) to the conductivity of two-dimensional electron gas (2DEG) in an undoped Al0.26Ga0.74NAlNGaN heterostructure are reported. A small but significant decrease of the Hall slope with the increase of temperature was discovered. This is not due to the increase of electron concentration as temperature increases but to the EEI effect. Both diffusion and ballistic contributions of EEI to the conductivity of 2DEG were observed. As the temperature increases, the negative diffusion EEI correction to the conductivity increases in an absolute value while the ballistic EEI correction reduces to a renormalization of the transport mobility.",

keywords = "A. Heterojunctions, A. Nanostructures, D. Electronelectron interactions",

author = "Zhou, {W. Z.} and T. Lin and Shang, {L. Y.} and G. Yu and K. Han and Duan, {J. X.} and N. Tang and B. Shen and Chu, {J. H.}",

year = "2011",

month = jun,

doi = "10.1016/j.ssc.2011.04.003",

language = "English",

volume = "151",

pages = "879--882",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "12",

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TY - JOUR

T1 - Diffusion and ballistic contributions of electronelectron interaction to the conductivity in an Al0.26Ga0.74NAlNGaN heterostructure

AU - Zhou, W. Z.

AU - Lin, T.

AU - Shang, L. Y.

AU - Yu, G.

AU - Han, K.

AU - Duan, J. X.

AU - Tang, N.

AU - Shen, B.

AU - Chu, J. H.

PY - 2011/6

Y1 - 2011/6

N2 - The results of an experimental study of quantum correction of electronelectron interaction (EEI) to the conductivity of two-dimensional electron gas (2DEG) in an undoped Al0.26Ga0.74NAlNGaN heterostructure are reported. A small but significant decrease of the Hall slope with the increase of temperature was discovered. This is not due to the increase of electron concentration as temperature increases but to the EEI effect. Both diffusion and ballistic contributions of EEI to the conductivity of 2DEG were observed. As the temperature increases, the negative diffusion EEI correction to the conductivity increases in an absolute value while the ballistic EEI correction reduces to a renormalization of the transport mobility.

AB - The results of an experimental study of quantum correction of electronelectron interaction (EEI) to the conductivity of two-dimensional electron gas (2DEG) in an undoped Al0.26Ga0.74NAlNGaN heterostructure are reported. A small but significant decrease of the Hall slope with the increase of temperature was discovered. This is not due to the increase of electron concentration as temperature increases but to the EEI effect. Both diffusion and ballistic contributions of EEI to the conductivity of 2DEG were observed. As the temperature increases, the negative diffusion EEI correction to the conductivity increases in an absolute value while the ballistic EEI correction reduces to a renormalization of the transport mobility.

KW - A. Heterojunctions

KW - A. Nanostructures

KW - D. Electronelectron interactions

UR - http://www.scopus.com/inward/record.url?scp=79955912259&partnerID=8YFLogxK

U2 - 10.1016/j.ssc.2011.04.003

DO - 10.1016/j.ssc.2011.04.003

M3 - Article

AN - SCOPUS:79955912259

SN - 0038-1098

VL - 151

SP - 879

EP - 882

JO - Solid State Communications

JF - Solid State Communications

IS - 12

ER -

Diffusion and ballistic contributions of electronelectron interaction to the conductivity in an Al_0.26Ga_0.74NAlNGaN heterostructure

Abstract

Keywords

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