Abstract
A design of four mirror imaging optics has been presented. The optics is designed for 50 nm at the wavelength of 13.5 nm. The exposure field is 25 mm×0.5 mm on wafer. The astigmatism and the distortion are corrected well in the ring field. The study shows a potential solution of four-mirror camera with numerical aperture (NA)≥0.15 for extreme ultraviolet lithography (EUVL). The ring is still not large enough to meet the requirements of EUVL.
| Original language | English |
|---|---|
| Pages (from-to) | 759-764 |
| Number of pages | 6 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 3997 |
| Publication status | Published - 2000 |
| Externally published | Yes |
| Event | Emerging Lithographic Technologies IV - Santa Clara, CA, USA Duration: 28 Feb 2000 → 1 Mar 2000 |