Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload

Jin Xie; Zhenhua Liu; Xiao Zhang; Jun Cao; Jun Dai; Chao Zeng

doi:10.1007/978-981-97-0922-9_165

Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload

Jin Xie^*, Zhenhua Liu, Xiao Zhang, Jun Cao, Jun Dai, Chao Zeng

^*Corresponding author for this work

School of Mechatronical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This paper presents a new method for wafer-level packaging of MEMS silicon-on-insulator (SOI) sensors and actuators working in the situation of over-loading. The developed process starts with backside deep reactive ion etching (DRIE) of the substrate to define the support structures as down stop blocks. This is followed by hydrofluoric acid etching to remove excessive SiO2 layer underneath the structural area to free the movable device parts. Then, another step of DRIE was applied on the device layer to form the device features. As the area of support structures are much smaller than proof mass, no stiction was observed. Finally, a glass wafer was used to encapsulate the switch using an anodic bonding technique to form a up stop block. In the work described here, the process is demonstrated for micromachining of an optical switch surviving from the high-impact overload environment at 20,000 g with pulse-width 120 μs.

Original language	English
Title of host publication	Advances in Mechanical Design - The Proceedings of the 2023 International Conference on Mechanical Design, ICMD 2023
Editors	Jianrong Tan, Yu Liu, Hong-Zhong Huang, Jingjun Yu, Zequn Wang
Publisher	Springer Science and Business Media B.V.
Pages	2605-2613
Number of pages	9
ISBN (Print)	9789819709212
DOIs	https://doi.org/10.1007/978-981-97-0922-9_165
Publication status	Published - 2024
Event	International Conference on Mechanical Design, ICMD 2023 - Chengdu, China Duration: 20 Oct 2023 → 22 Oct 2023

Publication series

Name	Mechanisms and Machine Science
Volume	155 MMS
ISSN (Print)	2211-0984
ISSN (Electronic)	2211-0992

Conference

Conference	International Conference on Mechanical Design, ICMD 2023
Country/Territory	China
City	Chengdu
Period	20/10/23 → 22/10/23

Keywords

Backside DRIE
High-impact overload
Optical switch

Access to Document

10.1007/978-981-97-0922-9_165

Cite this

Xie, J., Liu, Z., Zhang, X., Cao, J., Dai, J., & Zeng, C. (2024). Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload. In J. Tan, Y. Liu, H.-Z. Huang, J. Yu, & Z. Wang (Eds.), Advances in Mechanical Design - The Proceedings of the 2023 International Conference on Mechanical Design, ICMD 2023 (pp. 2605-2613). (Mechanisms and Machine Science; Vol. 155 MMS). Springer Science and Business Media B.V.. https://doi.org/10.1007/978-981-97-0922-9_165

Xie, Jin ; Liu, Zhenhua ; Zhang, Xiao et al. / Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload. Advances in Mechanical Design - The Proceedings of the 2023 International Conference on Mechanical Design, ICMD 2023. editor / Jianrong Tan ; Yu Liu ; Hong-Zhong Huang ; Jingjun Yu ; Zequn Wang. Springer Science and Business Media B.V., 2024. pp. 2605-2613 (Mechanisms and Machine Science).

@inproceedings{c6b7332e7a34409191df234724a2ed89,

title = "Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload",

abstract = "This paper presents a new method for wafer-level packaging of MEMS silicon-on-insulator (SOI) sensors and actuators working in the situation of over-loading. The developed process starts with backside deep reactive ion etching (DRIE) of the substrate to define the support structures as down stop blocks. This is followed by hydrofluoric acid etching to remove excessive SiO2 layer underneath the structural area to free the movable device parts. Then, another step of DRIE was applied on the device layer to form the device features. As the area of support structures are much smaller than proof mass, no stiction was observed. Finally, a glass wafer was used to encapsulate the switch using an anodic bonding technique to form a up stop block. In the work described here, the process is demonstrated for micromachining of an optical switch surviving from the high-impact overload environment at 20,000 g with pulse-width 120 μs.",

keywords = "Backside DRIE, High-impact overload, Optical switch",

author = "Jin Xie and Zhenhua Liu and Xiao Zhang and Jun Cao and Jun Dai and Chao Zeng",

note = "Publisher Copyright: {\textcopyright} The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024.; International Conference on Mechanical Design, ICMD 2023 ; Conference date: 20-10-2023 Through 22-10-2023",

year = "2024",

doi = "10.1007/978-981-97-0922-9_165",

language = "English",

isbn = "9789819709212",

series = "Mechanisms and Machine Science",

publisher = "Springer Science and Business Media B.V.",

pages = "2605--2613",

editor = "Jianrong Tan and Yu Liu and Hong-Zhong Huang and Jingjun Yu and Zequn Wang",

booktitle = "Advances in Mechanical Design - The Proceedings of the 2023 International Conference on Mechanical Design, ICMD 2023",

address = "Germany",

}

Xie, J, Liu, Z, Zhang, X, Cao, J, Dai, J & Zeng, C 2024, Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload. in J Tan, Y Liu, H-Z Huang, J Yu & Z Wang (eds), Advances in Mechanical Design - The Proceedings of the 2023 International Conference on Mechanical Design, ICMD 2023. Mechanisms and Machine Science, vol. 155 MMS, Springer Science and Business Media B.V., pp. 2605-2613, International Conference on Mechanical Design, ICMD 2023, Chengdu, China, 20/10/23. https://doi.org/10.1007/978-981-97-0922-9_165

Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload. / Xie, Jin; Liu, Zhenhua; Zhang, Xiao et al.
Advances in Mechanical Design - The Proceedings of the 2023 International Conference on Mechanical Design, ICMD 2023. ed. / Jianrong Tan; Yu Liu; Hong-Zhong Huang; Jingjun Yu; Zequn Wang. Springer Science and Business Media B.V., 2024. p. 2605-2613 (Mechanisms and Machine Science; Vol. 155 MMS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload

AU - Xie, Jin

AU - Liu, Zhenhua

AU - Zhang, Xiao

AU - Cao, Jun

AU - Dai, Jun

AU - Zeng, Chao

N1 - Publisher Copyright: © The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024.

PY - 2024

Y1 - 2024

N2 - This paper presents a new method for wafer-level packaging of MEMS silicon-on-insulator (SOI) sensors and actuators working in the situation of over-loading. The developed process starts with backside deep reactive ion etching (DRIE) of the substrate to define the support structures as down stop blocks. This is followed by hydrofluoric acid etching to remove excessive SiO2 layer underneath the structural area to free the movable device parts. Then, another step of DRIE was applied on the device layer to form the device features. As the area of support structures are much smaller than proof mass, no stiction was observed. Finally, a glass wafer was used to encapsulate the switch using an anodic bonding technique to form a up stop block. In the work described here, the process is demonstrated for micromachining of an optical switch surviving from the high-impact overload environment at 20,000 g with pulse-width 120 μs.

AB - This paper presents a new method for wafer-level packaging of MEMS silicon-on-insulator (SOI) sensors and actuators working in the situation of over-loading. The developed process starts with backside deep reactive ion etching (DRIE) of the substrate to define the support structures as down stop blocks. This is followed by hydrofluoric acid etching to remove excessive SiO2 layer underneath the structural area to free the movable device parts. Then, another step of DRIE was applied on the device layer to form the device features. As the area of support structures are much smaller than proof mass, no stiction was observed. Finally, a glass wafer was used to encapsulate the switch using an anodic bonding technique to form a up stop block. In the work described here, the process is demonstrated for micromachining of an optical switch surviving from the high-impact overload environment at 20,000 g with pulse-width 120 μs.

KW - Backside DRIE

KW - High-impact overload

KW - Optical switch

UR - http://www.scopus.com/inward/record.url?scp=85199276153&partnerID=8YFLogxK

U2 - 10.1007/978-981-97-0922-9_165

DO - 10.1007/978-981-97-0922-9_165

M3 - Conference contribution

AN - SCOPUS:85199276153

SN - 9789819709212

T3 - Mechanisms and Machine Science

SP - 2605

EP - 2613

BT - Advances in Mechanical Design - The Proceedings of the 2023 International Conference on Mechanical Design, ICMD 2023

A2 - Tan, Jianrong

A2 - Liu, Yu

A2 - Huang, Hong-Zhong

A2 - Yu, Jingjun

A2 - Wang, Zequn

PB - Springer Science and Business Media B.V.

T2 - International Conference on Mechanical Design, ICMD 2023

Y2 - 20 October 2023 through 22 October 2023

ER -

Xie J, Liu Z, Zhang X, Cao J, Dai J, Zeng C. Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload. In Tan J, Liu Y, Huang HZ, Yu J, Wang Z, editors, Advances in Mechanical Design - The Proceedings of the 2023 International Conference on Mechanical Design, ICMD 2023. Springer Science and Business Media B.V. 2024. p. 2605-2613. (Mechanisms and Machine Science). doi: 10.1007/978-981-97-0922-9_165

Design and Fabrication of an SOI Optical Switch with Backside Release for Anti-high-Overload

Abstract

Publication series

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this