TY - JOUR
T1 - Conduction Modulation of Solution-Processed 2D Materials
AU - Liu, Songwei
AU - Fan, Xiaoyue
AU - Wen, Yingyi
AU - Liu, Pengyu
AU - Liu, Yang
AU - Pei, Jingfang
AU - Yang, Wenchen
AU - Song, Lekai
AU - Pan, Danmei
AU - Zhang, Panpan
AU - Ma, Teng
AU - Lin, Yue
AU - Wang, Gang
AU - Hu, Guohua
N1 - Publisher Copyright:
© 2024 The Authors. Advanced Electronic Materials published by Wiley-VCH GmbH.
PY - 2024
Y1 - 2024
N2 - Solution-processed 2D materials hold promise for their scalable applications. However, the random, fragmented nature of the solution-processed nanoflakes and the poor percolative conduction through their discrete networks limit the performance of the enabled devices. To overcome the problem, conduction modulation of the solution-processed 2D materials is reported via Stark effect. Using liquid-phase exfoliated molybdenum disulfide (MoS2) as an example, nonlinear conduction switching with a ratio of >105 is demonstrated by the local fields from the interfacial ferroelectric P(VDF-TrFE). Through density-functional theory calculations and in situ Raman scattering and photoluminescence spectroscopic analysis, the modulation is understood to arise from a charge redistribution in the solution-processed MoS2. Beyond MoS2, the modulation may be shown effective for the other solution-processed 2D materials and low-dimensional materials. The modulation can open their electronic device applications, for instance, thin-film nonlinear electronics and non-volatile memories.
AB - Solution-processed 2D materials hold promise for their scalable applications. However, the random, fragmented nature of the solution-processed nanoflakes and the poor percolative conduction through their discrete networks limit the performance of the enabled devices. To overcome the problem, conduction modulation of the solution-processed 2D materials is reported via Stark effect. Using liquid-phase exfoliated molybdenum disulfide (MoS2) as an example, nonlinear conduction switching with a ratio of >105 is demonstrated by the local fields from the interfacial ferroelectric P(VDF-TrFE). Through density-functional theory calculations and in situ Raman scattering and photoluminescence spectroscopic analysis, the modulation is understood to arise from a charge redistribution in the solution-processed MoS2. Beyond MoS2, the modulation may be shown effective for the other solution-processed 2D materials and low-dimensional materials. The modulation can open their electronic device applications, for instance, thin-film nonlinear electronics and non-volatile memories.
KW - charge redistribution
KW - conduction modulation
KW - quantum-confined Stark effect
KW - solution-processed 2D materials
KW - thin-film electronic devices
UR - http://www.scopus.com/inward/record.url?scp=85184170026&partnerID=8YFLogxK
U2 - 10.1002/aelm.202300799
DO - 10.1002/aelm.202300799
M3 - Article
AN - SCOPUS:85184170026
SN - 2199-160X
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
ER -